Insulated gate bipolar transistor structure and preparation method thereof
A bipolar transistor and insulated gate technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of increasing saturated collector current, failure of short-circuit operation of devices, and lowering of device threshold voltage. Reduce turn-off power consumption, improve turn-off speed, and enhance the effect of carrier extraction
Pending Publication Date: 2020-12-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] However, when the IGBT structure is turned on, the hole current easily enters the channel inversion region, causing conductance modulation in the channel region, resulting in the collector bias induced barrier lowering (CIBL) effect, which reduces the device threshold voltage and increases the saturated collector current. large, resulting in failure of the short-circuit operation of the device; and a large number of carriers stored in the drift region during turn-on, resulting in a relatively slow turn-off process of the device
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[0030] The following disclosure provides a number of different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact.
[0031] In addition, for the convenience of description, spatial relationship terms such as "below", "beneath", "lower", "above", "upper" may be used herein to describe The relationship of one element or component to another element or component is shown. Spatially relative te...
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The invention provides an insulated gate bipolar transistor structure and a preparation method thereof. The insulated gate bipolar transistor structure comprises: a collector structure, wherein the collector structure comprises a bottom collector, a P++ collector region located above the bottom collector and an N+ buffer layer located above the P++ collector region; a drift region located above the N+ buffer layer, wherein a super-junction structure is arranged in the drift region, and is composed of a plurality of first doped stand columns and a plurality of second doped stand columns which are sequentially and alternately arranged in the third-dimensional z direction; and a surface structure located above the drift region and comprising a P base region, a floating P base region, a trenchgate, P+ emitter regions, N+ emitter regions and a top emitter, wherein the trench gate, the P+ emitter regions and the N+ emitter regions are arranged in the P base region, the top emitter is arranged above the floating P base region, the trench gate, the P+ emitter regions and the N+ emitter regions, and the P+ emitter regions and the N+ emitter regions are alternately placed in a third-dimensional z direction perpendicular to the plane. According to the IGBT structure, the bias induction barrier reduction effect of the collector can be inhibited, and the working capacity of a device is improved.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to an insulated gate bipolar transistor (ie, IGBT) structure and a preparation method thereof. Background technique [0002] Insulated gate bipolar transistor (IGBT) combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) and bipolar junction transistor (BJT), and has the characteristics of MOSFET device voltage drive, high input impedance and fast switching speed. BJT has the characteristics of low conduction voltage drop and strong current drive capability, so it is widely used in energy conversion, locomotive traction, industrial frequency conversion, automotive electronics and consumer electronics, and is one of the important core devices in the field of power electronics. [0003] figure 1 Shown is an existing trench-gate IGBT structure comprising three electrodes: bottom collector C (10), top emitter E (8) and gate...
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IPC IPC(8): H01L29/739H01L29/06H01L29/08H01L21/331
CPCH01L29/7397H01L29/0634H01L29/0804H01L29/66348
Inventor胡飞宋李梅韩郑生杜寰
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI