IGBT device and manufacturing process thereof

A manufacturing process and device technology, applied in the field of power semiconductors, can solve the problems of loss of chip area, increase in saturation voltage drop, decrease in current density, etc., and achieve the effect of enhancing short-circuit capability, equalizing saturation voltage drop, and equalizing current density

Active Publication Date: 2020-12-22
JIANGSU HAIDONG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to achieve the same current specification, the cell pitch with the dummy structure usually increases proportionally. Under the same current specification, the chip area of ​​the dummy structure IGBT is usually twice that of the non-dummy structure; the chip area is lost under the same short-circuit capability, resulting in an increase in cost. High; the same chip area causes a decrease in current density and an increase in saturation voltage drop

Method used

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  • IGBT device and manufacturing process thereof
  • IGBT device and manufacturing process thereof
  • IGBT device and manufacturing process thereof

Examples

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Embodiment Construction

[0045]The detailed description follows with reference to the accompanying drawings, which form a part hereof and, in the present invention, are shown by way of explanation of specific embodiments for carrying out the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features explained or described for one embodiment can be used on or in combination with other embodiments to yield a still further embodiment. It is intended that the present invention includes such modifications and variations. These examples were described with specific language, but they should not be construed as limiting the scope of the appended claims. The drawings are for explanatory purposes only and are not drawn to scale. For purposes of clarity, corresponding elements are denoted by the same reference numerals in the different drawings unless otherwise specified...

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Abstract

The invention provides an IGBT device, and the IGBT device has good short-circuit capability, can reduce the saturation voltage drop of the IGBT device and improve the current density. The IGBT devicecomprises a semiconductor substrate and cells arranged on the semiconductor substrate, and the cells comprise effective cells and virtual cells. The IGBT device is characterized in that on the crosssection of the IGBT device, the effective cells comprise a first effective cell, a second effective cell and a third effective cell; the virtual cells comprise a first virtual cell and a second virtual cell, the first virtual cell and the first effective cell are separated through a trench gate, and the second virtual cell and the second effective cell are separated through a trench gate.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to an IGBT device, and also relates to a manufacturing process of the IGBT device. Background technique [0002] IGBT (INsulated Gate BiPolar TraNsistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. GTR has low saturation voltage, high current carrying density, but large driving current; MOSFET driving power is small, fast switching speed, but large conduction voltage drop, low current carrying density. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, fre...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/423H01L21/331
CPCH01L29/66348H01L29/7397H01L29/4236
Inventor赵家宽夏华秋夏华忠谈益民吕文生黄传伟
OwnerJIANGSU HAIDONG SEMICON TECH CO LTD