Supercharge Your Innovation With Domain-Expert AI Agents!

Thin film fluoropolymer composite cmp polishing pad

A fluoropolymer, composite polishing technology, used in electrical components, grinding tools, circuits, etc., can solve the problem of neglecting pad polymer modification

Active Publication Date: 2020-12-11
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] State-of-the-art pad designs have largely ignored pad polymer modification as a means to achieve increased rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film fluoropolymer composite cmp polishing pad
  • Thin film fluoropolymer composite cmp polishing pad
  • Thin film fluoropolymer composite cmp polishing pad

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0075] The physical properties of a set of samples A were performed with and without the addition of 10 weight percent PTFE-1 and PFA. Notable changes, as shown in the table below, are reductions in tensile strength, hardness, and most mechanical properties. Of particular interest is the difference between the effect of addition on the shear storage modulus (G'), which is characteristic of elastic behavior, and the effect on the shear loss modulus (G"), which represents Energy dissipated in the sample. The shear storage modulus G' at 40°C is significantly lower (-31% for PFA and -45% for PTFE) relative to the control. The shear loss modulus G" is shown Similar trends were observed (-26% for PFA and -37% for PTFE). While all samples were primarily elastomeric polymers, PFA and PTFE additions increased tan δ (the ratio of G” to G’) by 6% and 14%, respectively. This is a direct measure of the increase in energy dissipation caused by fluoropolymer addition. Similar trends were o...

example 2

[0081] The deionized water contact angles were measured on Sample B, a set of mesoporous polyurethane pads that had different amounts of PTFE-2 added during the manufacturing process. Such as figure 1 As shown, the contact angle increases directly with increasing PTFE content, reaching a steady state value of about 140 degrees (PTFE content is 7.5%). Clearly, all mats with both PTFE and PFA additions are more hydrophobic than the parent mat. Nevertheless, the polished surface was hydrophilic as measured at a surface roughness of 10 μm rms with distilled water at pH 7 after soaking in distilled water for 5 minutes.

example 3

[0083] To demonstrate the beneficial effects of the present invention, polishing tests were performed on a set of high strength Sample A pads with and without PTFE and PFA additions. The concentration of each added fluoropolymer was 8.1%. In each test on an Applied Mirra CMP polishing tool, three slurries were tested on each pad set using a 60 200 mm TEOS monitor wafer. The slurries used were two ceria slurries (Asahi CES333F2.5 and DA Nano STI2100F) and fumed silica slurries (CabotSS25). The conditions used were 3 psi (20.7 kPa) downforce, 93 rpm platen speed, 87 rpm carriage speed and a slurry flow rate of 150 ml / min. Finishers vary by slurry type. For the ceria slurry, a Saesol LPX-C4 diamond conditioner disc was used. For silica slurries, Saesol AK45 conditioner discs were used. All dressers were used with a polishing condition of 7 lbf (3.2 kgf). For each run, a 20-minute pad break-in conditioning step was performed at 7 lbf (3.2 kgf) to ensure a uniform initial pad ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. A polymeric matrix forms the polishing layer. Fluoropolymer particles are embedded in the polymeric matrix, wherein diamond abrasive materials cut the fluoropolymer particles and rubbing the cut fluoropolymer against a patterned siliconwafer forms a thin film covering at least a portion of the polishing layer and the thin film has a zeta potential more negative than the polymeric matrix at a pH of 7. The polishing surface formed from rubbing with the wafer has a fluorine concentration at a penetration depth of 1 to 10 nm of at least ten atomic percent higher than the bulk fluorine concentration at a penetration depth of 1 to 10[mu]m.

Description

Background technique [0001] Chemical-mechanical planarization (CMP) is a variant of the polishing process that is widely used to planarize or planarize the construction layers of integrated circuits to precisely build multilayer three-dimensional circuits. The layer to be polished is typically a thin film (less than 10,000 Angstroms) that has been deposited on the underlying substrate. The purpose of CMP is to remove excess material on the surface of the wafer to produce an extremely flat layer of uniform thickness across the entire wafer. Controlling removal rate and removal uniformity is critical. [0002] CMP uses a liquid (commonly called a slurry) that contains nano-sized particles. It is fed onto the surface of a rotating multilayer polymer sheet or pad mounted on a rotating platen. Wafers are mounted into individual fixtures or carriers with individual rotating devices and pressed against the surface of the pad under a controlled load. This results in a high rate of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24
CPCB24B37/245B24B37/22B24B37/24C08L101/04H01L21/67092
Inventor M·T·伊斯兰邱南荣M·R·加丁科Y·朴G·S·布莱克曼L·张G·C·雅各布
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com