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A multi-step drive control method for wide bandgap power devices

A power device and wide bandgap technology, which is applied in the field of multi-step drive control of wide bandgap power devices, can solve the problems that affect the safety and stability of the device's effective use of power equipment, do not consider the switching characteristics of new devices, voltage and current spikes, etc. To achieve the effect of reducing the design difficulty, reducing the oscillation phenomenon, and improving the utilization

Active Publication Date: 2021-11-09
STATE GRID JIANGSU ELECTRIC POWER CO LTD SUQIAN POWER SUPPLY BRANCH +2
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AI Technical Summary

Problems solved by technology

[0003] However, due to the high switching speed of wide bandgap power devices, voltage and current spikes and severe oscillations will occur during the switching process, which will affect the effective use of devices and the safety and stability of power equipment.
The main problem is that the current driving method of wide bandgap power devices still uses the driving form of traditional silicon-based devices for reference, adopting direct pulse triggering, without considering the switching characteristics of new devices, and carrying out the driving design in line with the device itself

Method used

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  • A multi-step drive control method for wide bandgap power devices
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specific Embodiment

[0039] The switching process of power devices is essentially the charging and discharging process of different inter-electrode capacitors, and the change of the voltage difference between the two ends of the capacitor is the key factor affecting the charging and discharging speed. The present invention uses this characteristic of the capacitor to design .

[0040] In the following, a CAS300M17BM2 type SiCMOSFET half-bridge module device is taken as an example to describe an embodiment of two-step driving voltage control. During the switching process of the device, two steps are designed for its driving voltage. The trigger signal is sent by the MCU (microprocessor) to selectively trigger the voltage in the two-step leveler. The voltage includes two elements, namely its voltage amplitude and the maintenance time of the voltage.

[0041] During the turn-on process, the step voltage must be greater than the threshold voltage V of the device th (2.5V), and less than the forward...

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Abstract

The invention relates to a multi-step drive control method for a wide bandgap power device, which relates to a control method, in particular to a multi-step drive control method for optimizing the switching performance of a wide bandgap power device. It includes a turn-on method applied to a device turn-on process and a turn-off method applied to a device turn-off process. The multi-step drive voltage control system for realizing the method includes an MCU microprocessor, a multi-step leveler and a power amplifier; the MCU microprocessor is used to generate a trigger pulse signal for the step drive voltage, and the multi-step leveler is used to preset multi-step The driving voltage, the power amplifier amplifies the power of the triggered cascade driving voltage. The invention can realize the adjustable switching speed of the device, reduce the design difficulty of device protection, and improve the utilization of the safe working area of ​​the device; effectively reduce the voltage and current spikes during the device switching process, reduce the oscillation phenomenon of voltage and current, and improve the safety performance of device utilization , thereby improving the safety of high-voltage and large-capacity power electronic devices.

Description

technical field [0001] The invention relates to a multi-step drive control method for a wide bandgap power device, which relates to a control method, in particular to a multi-step drive control method for optimizing the switching performance of a wide bandgap power device. Background technique [0002] When it is difficult for silicon-based devices to break through their physical limitations, wide-bandgap power semiconductor devices emerge as the times require. As a new third-generation power semiconductor device, it has the advantages of high power, high voltage, high temperature, and low switching loss. As the power grid tends to develop in the direction of ultra-high voltage, large capacity, long-distance and intelligence, the demand for high-performance power electronic devices is becoming more and more urgent. When wide bandgap power devices are applied to high-voltage and large-capacity power electronic devices in power systems, they can reduce the number of cascaded ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08Y02B70/10
Inventor 董振邦曹萌萌邱冬赖勇史文萍张琪媛李昊洋高怡宁
Owner STATE GRID JIANGSU ELECTRIC POWER CO LTD SUQIAN POWER SUPPLY BRANCH
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