Multi-step driving control method of wide-bandgap power device

Abstract

The invention discloses a multi-step driving control method for a wide-bandgap power device, belonging to a control method. In particular, the invention relates to the multi-step driving control method for optimizing the switching performance of the wide-bandgap power device. The method comprises a switching-on method applied to a switching-on process of the device and a switching-off method applied to a switching-off process of the device. A multi-step driving voltage control system for realizing the method comprises an MCU microprocessor, a multi-step level device and a power amplifier, wherein the MCU microprocessor is used for generating trigger pulse signals of stepped driving voltage, the multi-step level device is used for presetting multi-step driving voltage, and the power amplifier is used for carrying out power amplification on the triggered stepped driving voltage. The switching speed of the device can be adjusted, the design difficulty of device protection is reduced, andthe utilization of a working safety region of the device is improved; and in the switching process of the device, voltage and current peaks are effectively reduced, the oscillation phenomenon of voltage and current is reduced, the safety performance of device utilization is improved, and then the safety of the high-voltage high-capacity power electronic device is improved.

Description

technical field [0001] The invention relates to a multi-step drive control method for a wide bandgap power device, which relates to a control method, in particular to a multi-step drive control method for optimizing the switching performance of a wide bandgap power device. Background technique [0002] When it is difficult for silicon-based devices to break through their physical limitations, wide-bandgap power semiconductor devices emerge as the times require. As a new third-generation power semiconductor device, it has the advantages of high power, high voltage, high temperature, and low switching loss. As the power grid tends to develop in the direction of ultra-high voltage, large capacity, long-distance and intelligence, the demand for high-performance power electronic devices is becoming more and more urgent. When wide bandgap power devices are applied to high-voltage and large-capacity power electronic devices in power systems, they can reduce the number of cascaded ...

AI Technical Summary

Problems solved by technology

[0003] However, due to the high switching speed of wide bandgap power devices, voltage and current spikes and severe oscillations will occur during the switching process, which will affect the effective use of devices and the safety and stability of power equipment.

The main problem is that the current driving method of wide bandgap power devices still uses the driving form of traditional silicon-based devices for reference, adopting direct pulse triggering, without considering the switching characteristics of new devices, and carrying out the driving design in line with the device itself

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