Chemical mechanical polishing solution, semiconductor structure and preparation method thereof

Abstract

The embodiment of the invention relates to a chemical mechanical polishing solution, chemical mechanical polishing equipment, a semiconductor structure and a preparation method thereof. The chemical mechanical polishing solution is used for thinning a polycrystalline silicon structure to obtain a polycrystalline silicon layer with a flat surface, and comprises silicon dioxide grinding particles, a peroxy compound and deionized water, wherein the volume percentage of the peroxy compound is not less than 3% and not more than 10%. In the process of thinning a polycrystalline silicon structure through chemical mechanical polishing, polycrystalline silicon making contact with chemical mechanical polishing liquid is oxidized into silicon dioxide through the peroxy compound, the contact angle of the chemical mechanical polishing solution is reduced, the grinding effect is improved, the cleaning effect after chemical mechanical grinding is improved, and the production cost is reduced; and meanwhile, the peroxy compound can reduce the friction force between the chemical mechanical polishing solution and the polycrystalline silicon structure, so that scratches on the surface of the polycrystalline silicon structure are reduced, and a polycrystalline silicon layer with few surface particles and scratches is obtained.

Description

technical field

[0001] The embodiments of the present application relate to the technical field of semiconductors, in particular to a chemical mechanical polishing liquid, a chemical mechanical polishing device, a semiconductor device and a preparation method thereof. Background technique

[0002] With the development of the semiconductor industry, the size of electronic devices is gradually shrinking, and the flatness of the wafer surface is required to reach the nanometer level. Traditional planarization techniques can only achieve local planarization, and global planarization must be performed when the minimum feature size is below 0.25 microns. Common planarization techniques include heat flow method, rotating glass method, etch-back method, electron surround resonance method, selective deposition method, low-pressure plasma-enhanced CVD, deposition-etch-deposition method, etc., all of which are local planarization processes and cannot achieve global planarization. chan...

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