Method of processing a substrate
A substrate and protective film technology, which is applied in manufacturing tools, electrical solid devices, laser welding equipment, etc., can solve problems such as separation from each other, affecting the accuracy of the modified area, and the difficulty of invisible slicing.
Pending Publication Date: 2022-02-22
DISCO CORP
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] In particular, there is often a problem that the laser beam to be used for stealth laser dicing cannot pass through such a metal structure formed on the dicing line, making stealth dicing from the front side of the substrate difficult to achieve
However, in this case, there is a problem that the device structure on the substrate may be damaged by the adhesive force of the adhesive layer formed on the protective film or protective sheet, or the film or sheet may be removed from the substrate. Contamination by adhesive residue on device when peeled
In the case where a protective film or protective sheet is used having an adhesive layer applied only to its peripheral portion, the substrate may not be sufficiently supported by the film or sheet to suppress warping of the substrate
Substrate warpage can affect the precision of the modified regions formed within the substrate, making it difficult to separate the substrate into individual die
For example, some die may not be properly separated from each other and / or damaged during the substrate singulation process
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0175] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Preferred embodiments relate to methods of processing substrates.
[0176] In this embodiment, the method of the present invention is performed on a wafer W as a substrate to be processed. Wafer W may be a semiconductor wafer (eg, Si wafer). In particular, wafer W may be a single crystal Si wafer. However, different types of substrates may be used, in particular substrates of different substrate materials, as already described in detail above.
[0177] For example, the wafer W before grinding may have a thickness in the range of μm, preferably in the range of 625 to 925 μm. In the present embodiment, wafer W has a substantially circular shape when viewed from above. However, the shape of wafer W is not particularly limited. In other embodiments, wafer W may have, for example, an oval shape, an elliptical shape, or a polygonal shape such as a rectangular...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| width | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
This invention relates to a method of processing a substrate, having on one side a device area with a plurality of devices. The method includes attaching a first protective film to the one side of the substrate, so that at least a central area of a front surface of the first protective film is in direct contact with the one side of the substrate, and attaching a second protective film to the opposite side of the substrate. After attaching the second protective film, a laser beam is applied to the substrate from the opposite side of the substrate. The substrate and second protective film are transparent to the laser beam. The laser beam is applied to the substrate in a plurality of positions so as to form a plurality of modified regions in the substrate.
Description
[0001] Cross References to Related Applications [0002] This application claims priority and benefit from German Patent Application No. 10 2020 210104.3 filed with the German Patent and Trademark Office on 10.08.2020, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a method of processing a substrate (eg a wafer such as a semiconductor wafer) having a device area with a plurality of devices on one side. Background technique [0004] In a device manufacturing process (eg, a semiconductor device manufacturing process), a substrate (eg, wafer) having a device region with multiple devices (usually divided by a plurality of dicing lines) is diced into individual dies (die ). The device fabrication process typically includes a dicing step such as dicing the substrate along dicing lines to obtain individual dies. Furthermore, further processing steps, such as grinding and / or polishing and / or etching, may a...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/301B23K26/53H01L21/56H01L21/78
CPCH01L21/30B23K26/53H01L21/56H01L21/78H01L21/6836H01L2221/68327H01L2221/6834H01L2221/68336
Inventor 健辅长冈泰吉汤平
Owner DISCO CORP