Memory and programming operation method thereof, peripheral circuit and memory system

Abstract

The invention provides a memory, a programming operation method thereof, a peripheral circuit and a memory system. The memory sequentially comprises an array common source electrode, a bottom layer, a middle layer, a top layer and a bit line which are connected in series along a preset direction, and the programming operation method of the memory comprises the following steps: performing pre-charging of programming operation: providing a first voltage for the array common source electrode and the bit line; a second voltage is provided for a programmed state storage unit in the memory, so that a channel in the programmed state storage unit is conducted, and the programmed state storage unit is located at least one of the middle level and the top level; and performing programming operation on the middle to-be-programmed storage unit in the middle level.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a memory programming operation method, a peripheral circuit, a memory, and a storage system. Background technique [0002] With the application of 5G technology and the rapid growth of demand for Internet of Things applications, the market demand for memory storage capacity is increasing. 3D NAND Flash, as the current mainstream storage device, generally increases the storage capacity by increasing the number of storage layers. However, in the actual manufacturing process of the memory, due to the limitation of the deep hole etching process, the number of layers is generally increased by multiple etchings. For example, existing mainstream products have adopted a 2-layer stacking layer architecture, and the number of stacking layers may continue to increase in the future, such as adopting 3 or more stacking layers. [0003] At present, when programming ...

AI Technical Summary

Problems solved by technology

However, with the increase in the number of stacked layers and the number of stacked layers in 3D NAND memory, the length of the channel is getting longer and the bonding area between the stacked layers is more and more, so that the electrons in the channel farther from the source terminal are affected. Due to the limited electric field force, it cannot migrate to the source terminal efficiently, which leads to the inability to effectively reduce the channel charge density in the pre-charging stage, and the programming interference is serious.

Images