Memory, memory system and pre-charging method

Abstract

The embodiment of the invention discloses a memory, a storage system and a pre-charging method, and belongs to the technical field of storage. The pre-charging method comprises the following steps: applying a pre-charging voltage to a source line connecting end; applying a voltage to the gate of each memory cell in the memory cell stack; wherein the voltage applied to the grid electrode of the programmed storage unit is greater than the threshold voltage of the programmed storage unit, and the voltage applied to the grid electrode of the non-programmed storage unit is greater than the threshold voltage of the non-programmed storage unit. According to the method, the electrons in the doped region and the electrons in the channel of the memory cell coupled with the selected word line can be fully attracted to the source line connecting end under the condition that the programmed memory cell exists in the memory cell stack, so that the non-selected memory string can be fully pre-charged; and the programming interference suffered by the memory unit coupled with the selected word line in the memory unit stack is reduced.

Description

technical field [0001] The embodiments of the present application relate to the field of storage technologies, and in particular, to a memory, a storage system, and a precharging method. Background technique [0002] The memory usually includes a plurality of memory strings. In some embodiments, each memory string includes a selection transistor stack and a memory cell stack between the bit line connection end and the source line connection end. The selection transistor stack and the memory cell stack are doped area connection. [0003] In the related art, the method of precharging the unselected storage strings among the above multiple storage strings is: applying a precharge voltage to the source line connection terminals of the unselected storage strings, and applying a precharge voltage to each memory cell in the memory cell stack. Both gates are applied with 0V voltage. [0004] When the above method is used for precharging, if there are programmed memory cells in the...

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Problems solved by technology

[0004] When using the above method for precharging, if there are programmed memory cells in the memory cell stack, it will lead to insufficient precharging, so that the memory cells coupled with the selected word line in the memory cell stack will be subject to strong program disturbance.

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