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Flash memory control method, flash memory crystal grain and flash memory

A control method and technology of flash memory, which is applied in the field of flash memory control, flash memory grain and flash memory, can solve the problem of not being able to know the NAND flash memory grain, etc., and achieve the effect of reducing the number of pads

Pending Publication Date: 2022-07-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under this architecture, the multi-channel flash memory controller 20 will not know which NAND flash memory die 10_0-10_m-1 is in a busy state, and must spend extra time to confirm the status of each flash memory die 10_0-10_m-1. Ready / Busy
In other words, under this structure, although the number of pads can be saved, it takes extra time to confirm the ready / busy status of each flash memory die 10_0˜10_m−1

Method used

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  • Flash memory control method, flash memory crystal grain and flash memory
  • Flash memory control method, flash memory crystal grain and flash memory
  • Flash memory control method, flash memory crystal grain and flash memory

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Embodiment Construction

[0067] Figure 3A A schematic diagram of a flash memory structure according to an embodiment of the present invention is shown. Figure 3B A schematic diagram of the structure of a NAND flash memory die according to an embodiment of the present invention is shown, that is, Figure 3A A schematic diagram of the architecture of each NAND flash die in each channel. Although Figure 3A The structure of a multi-channel flash memory is shown, but the description of this embodiment will take one of the channels as the description object. Both the method and the architecture of this embodiment are applicable to single-channel or multi-channel situations.

[0068] like Figure 3A As shown, the NAND flash memory controller 200 or the host 200 may be connected with n channels (0˜n−1) of flash memory strings, and each channel of the flash memory string may include multiple flash memory dies. For example, each NAND flash memory channel 0-n-1 has m NAND flash memory dies 100_0-100_m-1....

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Abstract

The invention discloses a control method of a flash memory, a flash memory crystal grain and the flash memory. The flash memory is provided with an external data bus connected with a plurality of flash memory grains. The control method of the flash memory comprises the following steps: in a setting stage, in an operation mode of command input, sending a setting command by a main controller, and respectively mapping each port of a data bus of each flash memory crystal grain to a state index of each flash memory crystal grain; and in a request stage, in a command input operation mode, the master controller sends a request command to each flash memory crystal grain, and in a data output operation mode, the state of the state index of each flash memory crystal grain is transmitted to the master controller through each port of the corresponding external data bus.

Description

technical field [0001] The present invention relates to a flash memory, and more particularly, to a control method of a flash memory, a flash memory die, and a flash memory. Background technique [0002] Currently, NAND flash memory controllers face a substantial increase in the number of NAND flash memory dies to be controlled, which results in an increase in the number of controller pads and an increase in die size. Also, the ready / busy (R / B) signals of all logic units are also connected to the shared R / B signal line. Therefore, if you want to know which logic unit is busy when the shared R / B signal line is busy, you need to issue a "read status command" to inquire whether the specified logic unit is ready or busy. [0003] In general, the implementation of the R / B state of NAND flash memory uses an open drain design. figure 1 A schematic diagram of the open-drain circuit of the NAND flash memory is shown. like figure 1 As shown, there are multiple NAND flash dies 0, 1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16G11C16/10G11C16/26
CPCG06F13/1678G11C16/26G11C16/10G06F3/0679G06F3/0659G06F3/0604G06F3/0632
Inventor 阮士洲纪旻志
Owner MACRONIX INT CO LTD