Semiconductor laser device and manufacturing method thereof

a laser device and semiconductor technology, applied in the direction of lasers, semiconductor laser structural details, semiconductor lasers, etc., can solve the problems of difficult to form a structurally stable cleavage facet, nitride semiconductor layer scratching, displacement of cleavage facet, etc., and achieve excellent yield

Inactive Publication Date: 2011-05-26
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables the formation of semiconductor laser devices with stable cleavage facets, improving the yield and accuracy of the cleavage process, resulting in higher-quality nitride semiconductor laser devices.

Problems solved by technology

Therefore, upon cleavage, cracks are formed also in the direction of 60 degrees from the cleavage direction, and it is difficult to form a structurally stable cleavage facet.
However, when cleavage guide grooves are formed by scribing or dicing, a nitride semiconductor layer is scratched.
Therefore, a lot of defects such as end facet cracks, unevenness, fractures, and chips are generated in the grooves themselves, causing a cleavage facet to be displaced.
Moreover, since grooves formed by scribing do not necessarily have a uniform shape, it is difficult to accurately control the cleavage position.
However, the inventors found that, in the case of a nitride semiconductor, an intended cleavage facet still cannot be obtained even when the cleavage guide grooves are formed.

Method used

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  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof

Examples

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first embodiment

[0033]Hereinafter, a first embodiment of the invention will be described with reference to the drawings. FIGS. 1A through 1C show the structure of a semiconductor laser device according to the first embodiment. FIG. 1A shows the whole structure of the semiconductor laser device, FIG. 1B shows a planar structure of the semiconductor laser device, and FIG. 1C shows a cross-sectional structure on the side of a resonator end facet. The semiconductor laser device of this embodiment is a semiconductor chip obtained from a semiconductor wafer with multi-layer of nitride semiconductors.

[0034]As shown in FIGS. 1A through 1C, the semiconductor laser of this embodiment includes a substrate 11 formed from gallium nitride (GaN), and a nitride semiconductor multi-layer 12 formed on the substrate 11. The nitride semiconductor multi-layer 12 has an n-type semiconductor layer 21, an active layer 22, and a p-type semiconductor layer 23 which are sequentially epitaxial-grown on the substrate 11. The a...

second embodiment

[0065]Hereinafter, a second embodiment of the invention will be described with reference to the drawings. FIG. 12 shows a semiconductor laser device according to a second embodiment of the invention. In FIG. 12, the same elements as those of FIGS. 1A through 1C are denoted with the same reference numerals and characters, and description thereof will be omitted.

[0066]As shown in FIG. 12, in the semiconductor laser device of this embodiment, a p-type semiconductor layer 23, an active layer 22, and a part of an n-type semiconductor layer 21 are etched on both sides of a ridge stripe portion 23a so that a mesa-shaped stepped portion 35 is formed for element isolation.

[0067]In this embodiment, the mesa-shaped stepped portion 35 is formed between each groove 32 and the ridge stripe portion 23a in the direction parallel to the extending direction of the ridge stripe portion 23a. Forming such a stepped portion 35 can suppress generation of cleavage cracks and the like in a cleavage facet 13...

third embodiment

[0071]Hereinafter, a third embodiment of the invention will be described with reference to the drawings. FIGS. 15A and 15B show a structure of a portion between grooves 32 of a semiconductor laser device of the third embodiment. FIG. 15A shows a planar structure and FIG. 15B shows a cross-sectional structure. In FIGS. 15A and 15B, the same elements as those of FIGS. 3A and 3B are denoted with the same reference numerals and characters, and description thereof will be omitted.

[0072]As shown in FIGS. 15A and 15B, each groove 32 of the semiconductor laser device of this embodiment is formed by a shallow groove 32A and a deep groove 32B. The shallow groove 32A is formed by dry etching, and the deep groove 32B is formed by scribing a central part of the shallow groove 32A.

[0073]When a groove is formed by scribing, the depth of the groove can be easily increased. With scribing, however, grooves cannot be formed with a uniform shape. Therefore, cleavage cracks and the like are likely to be...

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Abstract

A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure, and includes a stripe-shaped wave guide portion. The chip includes two chip end facets that extend in a direction crossing an extending direction of the wave guide portion. Each of regions on both sides of the wave guide portion in at least one of the chip end facets has a notch portion formed by notching a part of the chip, and the notch portion exposes a first wall surface connecting to the chip end facet and a second wall surface connecting to the chip side facet. An angle between an extending direction of the first wall surface in at least one of the two notch portions and an extending direction of the cleavage facet is in a range of about 10 degrees to about 40 degrees.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims priority under 35 U.S.C. §119 on Patent Application No. 2006-238086 filed in Japan on Sep. 1, 2006, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a semiconductor laser device and a manufacturing method thereof. More particularly, the invention relates to a semiconductor laser device having a chip end facet formed by cleavage, and a manufacturing method thereof.[0004]2. Background Art[0005]III-V compound semiconductor laser devices such as aluminum gallium arsenic (AlGaAs)-based infrared laser devices or indium gallium phosphorus (InGaP)-based red laser devices have been widely used as elements of communication devices or as reading and writing elements of CDs (Compact Discs) or DVDs (Digital Versatile Discs). Recently, blue or ultraviolet semiconductor laser devices having a shorter wavelength have been imple...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L33/00H01S5/02H01S5/323
CPCB82Y20/00H01S5/0201H01S5/34333H01S5/22H01S5/0202
InventorOHNO, HIROSHI
OwnerPANASONIC CORP