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Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

a technology of composition and monomer, which is applied in the direction of photomechanical instruments, originals for photomechanical treatment, photomechanical apparatus, etc., can solve the problem of difficult to provide a fine pattern with an excellent profile, and achieve the effect of ensuring dissolubility

Inactive Publication Date: 2017-11-16
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a new material that can be used to make a hardmask for use in the manufacturing process of semiconductors. This material has good resistance to chemicals, heat, and etching, and can be dissolved in a solvent. It also has good properties for filling gaps and smoothing the surface of the semiconductor. Overall, this material helps to improve the manufacturing process of semiconductors.

Problems solved by technology

Nowadays, according to small-sizing the pattern to be formed, it is difficult to provide a fine pattern having an excellent profile by only above-mentioned typical lithographic technique.

Method used

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  • Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
  • Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
  • Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

First Step: Friedel-Craft Acylation Reaction

[0075]50.0 g (0.166 mol) of coronene, 28.4 g (0.1666 mol) of 4-methoxybenzoylchloride, and 235 g of 1,2-dichloroethane were put in a flask, preparing a solution. Then, 22.2 g (0.166 mol) of aluminum chloride was slowly added to the solution at room temperature. The mixture was heated up to 60° C. and then, agitated for 8 hours. When the reaction was complete, methanol was added to the agitated solution. Then, a precipitate produced therein was filtrated, obtaining 4-methoxybenzoyl coronene.

Second Step: Demethylation

[0076]50.0 g (0.115 mol) of the 4-methoxybenzoyl coronene obtained in the first step, 58.2 g (0.288 mol) of 1-dodecanethiol, 19.4 g (0.345 mol) of potassium hydroxide, and 191 g of N,N-dimethylformamide was put in a flask, and the mixture was agitated for 120° C. for 8 hours. The agitated mixture was cooled down, neutralized with a 10% hydrogen chloride solution into about pH 7, and extracted with ethyl acetate, obtaining 4-hydr...

synthesis example 2

First Step: Friedel-Craft Acylation Reaction

[0078]50.0 g (0.166 mol) of coronene, 56.8 g (0.333 mol) of 4-methoxybenzoylchloride, and 353 g of 1,2-dichloroethane were put in a flask, preparing a solution. Then, 44.4 g (0.333 mol) of aluminum chloride was slowly added to the solution at room temperature, and the mixture was heated up to 60° C. and agitated for 8 hours. When the reaction was complete, methanol was added to the solution. Then, a precipitate produced therein was filtrated, obtaining double substituted 4-methoxybenzoyl coronene.

Second Step: Demethylation

[0079]50.0 g (0.880 mol) of the double substituted 4-methoxybenzoyl coronene obtained in the first step, 89.0 g (0.440 mol) of 1-dodecanethiol, 29.6 g (0.528 mol) of potassium hydroxide, and 253 g of N,N-dimethylformamide were put in a flask. The mixture was agitated at 120° C. for 8 hours. Then, the agitated mixture was cooled down, neutralized with a 10% hydrogen chloride solution into about pH 7, and extracted with eth...

synthesis example 3

First Step: Friedel-Craft Acylation Reaction

[0081]50.0 g (0.166 mol) of coronene, 85.2 g (0.499 mol) of 4-methoxybenzoylchloride, and 471 g of 1,2-dichloroethane were put in a flask, preparing a solution. Then, 66.6 g (0.499 mol) of aluminum chloride was slowly added to the solution at room temperature. The mixture was heated up to 60° C. and agitated for 8 hours. When the reaction was complete, methanol was added to the solution. Then, a precipitate produced therein was filtrated triple substituted 4-methoxybenzoyl coronene.

Second Step: Demethylation

[0082]50.0 g (0.0712 mol) of the triple substituted 4-methoxybenzoyl coronene flask obtained in the first step, 108.0 g (0.534 mol) of 1-dodecanethiol, 35.9 g (0.640 mol) of potassium hydroxide, and 291 g of N,N-dimethylformamide were put in a flask. The mixture was agitated at 120° C. and agitated for 8 hours. Then, the agitated mixture was cooled down, neutralized with a 10% hydrogen chloride solution into about pH 7, and extracted wi...

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Abstract

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This is a continuaation application based on pending application Ser. No. 14 / 364,829, filed Jun. 12, 2014, the entire contents of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION(a) Field of the Invention[0002]A monomer for a hardmask composition, a hardmask composition including the monomer, and a method of forming a pattern using the hardmask composition are disclosed.(b) Description of the Related Art[0003]Recently, the semiconductor industry has developed to an ultra-fine technique having a pattern of several to several tens nanometer size. Such ultra-fine technique essentially needs effective lithographic techniques. The typical lithographic technique includes providing a material layer on a semiconductor substrate; coating a photoresist layer thereon; exposing and developing the same to provide a photoresist pattern; and etching the material layer using the photoresist pattern as a mask.[0004]Nowadays, according ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C08G65/26H01L21/02
CPCC08G65/2612H01L21/02282C07C39/21C07C39/225C08G65/38G03F7/094H01L21/02118H01L21/0332H01L21/31144G03F1/00G03F7/20
Inventor KIM, YUN-JUNCHEON, HWAN-SUNGCHO, YOUN-JINYOON, YONG-WOONLEE, CHUNG-HEONKWON, HYO-YOUNGCHOI, YOO-JEONG
Owner SAMSUNG SDI CO LTD