Arrayed semiconductor device, optical transmission module, optical module, and method for manufacturing thereof
a semiconductor and optical device technology, applied in semiconductor laser arrangements, semiconductor laser arrangements, lasers, etc., can solve the problems of deterioration of the crystallinity of the mqw layer, the limit of high density mounting considering a space, etc., and achieve the effect of reducing the variation in the performance of semiconductor optical devices
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first embodiment
[0033]FIG. 1 is a schematic diagram illustrating a configuration of an optical transmission device 101 according to the first embodiment of the invention. A plurality of optical modules 102 are mounted on the optical transmission device 101. The optical transmission device 101 includes a printed circuit board 111 and an IC 112. The optical transmission device 101 is, for example, a large capacity router or a switch. The optical transmission device 101 has, for example, a function of a signal exchanger and is disposed in a base station or the like. The optical transmission device 101 acquires data for reception (electric signal for reception) from the optical module 102, determines where to send the data using the IC 112 or the like, generates data for transmission (electric signal for transmission), and transmits the data to corresponding optical module 102 through the printed circuit board 111.
[0034]The optical module 102 is a transceiver having a function of transmission and recep...
second embodiment
[0068]The arrayed semiconductor optical device 11 according to a second embodiment of the present invention is, similarly to the first embodiment, a ridge structure type four-channel multiple wavelength laser device array, and each semiconductor optical device 12 is a semiconductor laser device that outputs a continuous wave (CW), specifically, a DFB laser. A plurality of electro-absorption (EA) modulators that modulate and output the continuous waves from each of the plurality of the semiconductor optical devices 12 are also monolithically integrated into the arrayed semiconductor optical device 11. That is, each semiconductor optical device 12 is a laser portion of the EA modulator integrated DFB laser. The arrayed semiconductor optical device 11 according to the first embodiment includes the Fe-doped InP substrate 20, and the n-side electrode 32 is formed on the same side with respect to the p-side electrode 31 and the semiconductor substrate. On the other hand, the arrayed semic...
third embodiment
[0072]An arrayed semiconductor optical device 11 according to a third embodiment of the invention is, similarly to the first embodiment, a four-channel multiple wavelength laser device array, and each semiconductor optical device 12 is a buried hetero structure type and direct modulation type semiconductor laser device, specifically, a DFB laser. By employing the buried hetero structure type, a semiconductor multilayer structure of semiconductor optical device 12 according to the embodiment is different from that of the first embodiment and a shape of the p-side electrode 31 is also different from that of the first embodiment, but other structures are the same as that of the first embodiment.
[0073]FIG. 8 is a schematic diagram illustrating a structure of the arrayed semiconductor optical device 11 according to the embodiment. In the semiconductor multilayer structure of the semiconductor optical device 12 according to the embodiment, an n-type InP layer 21, an n-type lower side opti...
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