Model compensating method for controlling thin film deposition rate in physical gaseous phase thin film deposition process

Abstract

The invention discloses a model compensating method for controlling thin film deposition rate in physical gaseous phase thin film deposition process, which is characterized by creating a relational model between the deposition rate and target material consumption amount on the basis of off-line measurement. Process control parameters including electric power in the thin film deposition process iscompensated by using the relational model, and relatively stable thin film deposition rate and thin film performance of products in different batches are achieved. The model compensating method is used for compensating main control parameters, so that stable thin film deposition rate is achieved, and adjustment of thin film micro-morphology and material performance is expected to be achieved through control of deposition rate. The model compensating method does not need to use complicated real-time observation systems.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for controlling the film deposition rate of a physical vapor deposition process. Background technique

[0002] The physical vapor phase thin film deposition process is usually used to prepare high-quality conductive thin film materials, which require precise control of film thickness and material properties. However, the deposition rate of the film will deviate significantly with the consumption of the target material, which will affect the precise control of the film thickness, and cause the intrinsic performance of the material and its device characteristics to deviate from the design requirements. In the existing technology, real-time monitoring and dynamic compensation of the deposition rate of the film is an effective method to obtain a stable film deposition rate, but the cost of this dynamic feedback compensation system is high, and the online...

Examples

Embodiment 1

[0064] In the vacuum thermal evaporation coating process heated by resistance, the heating current I is used as the compensation object process parameter X, that is, X=I, the source material consumption and I 2 are linearly related, so T is defined as

[0065] T = ∫ 0 t Ydt = ∫ 0 t I 2 dt

[0066] The mathematical model of film deposition rate R that needs to be established has the following form:

[0067] R=aI+p 3 T 3 +p 2 T 2 +p 1 T+R 0

[0068] According to the test machine data, perform linear regression and polynomial regression through the Matlab program, and obtain the corresponding regression coefficients: a, p 3 ,p 2 ,p 1 and R 0 .

[0069] Compensation coefficient k 3 、k 2 、k 1 :

[0070] k 3 = - ...

Embodiment 2

[0077] In the DC magnetron sputtering coating process, through the joint action of voltage and magnetic field, ionized inert gas Ar ions are used to bombard the target to generate ions, atoms or molecules, which are deposited on the substrate to form a thin film. In addition to using DC power P as the compensation target process parameter, if the magnetic field strength B can be automatically controlled and recorded, it is also possible to use the process parameters related to the magnetic field as the compensation target process parameter. This compensation method is expected to increase the utilization rate of source materials . Since target consumption is dependent on both electric power and magnetic field strength, the integral object Y can take the product of the two.

[0078] The compensation object process parameter X and the historical record parameter T are respectively defined as:

[0079] X = B;

[0080] T = ∫ 0...

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for controlling the film deposition rate of a physical vapor deposition process. Background technique

[0002] The physical vapor phase thin film deposition process is usually used to prepare high-quality conductive thin film materials, which require precise control of film thickness and material properties. However, the deposition rate of the film will deviate significantly with the consumption of the target material, which will affect the precise control of the film thickness, and cause the intrinsic performance of the material and its device characteristics to deviate from the design requirements. In the existing technology, real-time monitoring and dynamic compensation of the deposition rate of the film is an effective method to obtain a stable film deposition rate, but the cost of this dynamic feedback compensation system is high, and the online...

Examples

Embodiment 1

[0064] In the vacuum thermal evaporation coating process heated by resistance, the heating current I is used as the compensation object process parameter X, that is, X=I, the source material consumption and I 2 are linearly related, so T is defined as

[0065] T = ∫ 0 t Ydt = ∫ 0 t I 2 dt

[0066] The mathematical model of film deposition rate R that needs to be established has the following form:

[0067] R=aI+p 3 T 3 +p 2 T 2 +p 1 T+R 0

[0068] According to the test machine data, perform linear regression and polynomial regression through the Matlab program, and obtain the corresponding regression coefficients: a, p 3 ,p 2 ,p 1 and R 0 .

[0069] Compensation coefficient k 3 、k 2 、k 1 :

[0070] k 3 = - ...

Embodiment 2

[0077] In the DC magnetron sputtering coating process, through the joint action of voltage and magnetic field, ionized inert gas Ar ions are used to bombard the target to generate ions, atoms or molecules, which are deposited on the substrate to form a thin film. In addition to using DC power P as the compensation target process parameter, if the magnetic field strength B can be automatically controlled and recorded, it is also possible to use the process parameters related to the magnetic field as the compensation target process parameter. This compensation method is expected to increase the utilization rate of source materials . Since target consumption is dependent on both electric power and magnetic field strength, the integral object Y can take the product of the two.

[0078] The compensation object process parameter X and the historical record parameter T are respectively defined as:

[0079] X = B;

[0080] T = ∫ 0...

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