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Preparation method of MgO film to enhance the statistics of PDP on discharge delay time

A thin film preparation and delay time technology, which is applied in the manufacture of discharge tubes/lamps, electrode system manufacture, circuits, etc., can solve the problems that the jitter time has an optimization effect that has not been specified in detail, and shorten the statistical discharge delay time. The effect of operating and controlling production costs

Inactive Publication Date: 2010-01-13
NANJING HUAXIAN HIGH TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MgO films will exhibit different preferred crystallographic orientations under different oxygen partial pressures. It is said that the secondary electron emission coefficient of MgO films is the largest when the crystal orientation is , but it is not specified under which oxygen partial pressures the MgO films are prepared. Optimal effect on jitter time

Method used

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  • Preparation method of MgO film to enhance the statistics of PDP on discharge delay time
  • Preparation method of MgO film to enhance the statistics of PDP on discharge delay time
  • Preparation method of MgO film to enhance the statistics of PDP on discharge delay time

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] like figure 1 , 2 , 3 shown.

[0024] First, the front and rear glass substrates 1, 2 of the shadow mask type color plasma display screen are placed on the working fixture 9 in the evaporation chamber 8 of the electron beam vacuum coating machine, and the doped MgO crystal is used as the evaporation source. After the crucible 10 is installed in the furnace, Open the high vacuum valve 11 to evacuate the vacuum degree in the evaporation chamber 8 to 8×10 -5 Pa~5×10 -4 Pa, at the same time, use the heating device 12 to heat the temperature in the furnace to 300°C, and cool down to 250°C after reaching the requirements; secondly, make the glass substrates 1 and 2 rotate with the clamp 9, and a pair of electron beam evaporation guns 13 start to refine the guns, and the electron beam Start to bombard the MgO crystal target; after reaching the requirements, press the preset working oxygen partial pressure of 0.25×10 -2 Pa feeds oxygen from the oxygen port 14 and stabilizes...

Embodiment 2

[0028] like figure 1 , 2 , 4 shown.

[0029] First, the front and rear glass substrates 1, 2 of the shadow mask type color plasma display screen are placed on the working fixture 9 in the evaporation chamber 8 of the electron beam vacuum coating machine, and the doped MgO crystal is used as the evaporation source. After the crucible 10 is installed in the furnace, Open the high vacuum valve 11 to evacuate the vacuum degree in the evaporation chamber 8 to 8×10 -5 Pa~5×10 -4 Pa, at the same time use the heating device 12 to heat the temperature in the furnace to 300°C, and cool down to 250°C after reaching the requirements; then the glass substrates 1 and 2 rotate with the fixture 9, a pair of electron beam evaporation guns 13 start refining the guns, and the electron beam starts Bombard the MgO crystal target; after reaching the requirements, press the preset working oxygen partial pressure of 0.5×10 -2 Pa feeds oxygen from the oxygen port 14 and stabilizes the bombardment ...

Embodiment 3

[0033] like figure 1 , 2 , 5 shown.

[0034] First, the front and rear glass substrates 1, 2 of the shadow mask type color plasma display screen are placed on the working fixture 9 in the evaporation chamber 8 of the electron beam vacuum coating machine, and the doped MgO crystal is used as the evaporation source. After the crucible 10 is installed in the furnace, Open the high vacuum valve 11 to evacuate the vacuum degree in the evaporation chamber 8 to 8×10 -5 Pa~5×10 -4 Pa, at the same time use the heating device 12 to heat the temperature in the furnace to 300°C, and cool down to 250°C after reaching the requirements; then the glass substrates 1 and 2 rotate with the fixture 9, a pair of electron beam evaporation guns 13 start refining the guns, and the electron beam starts Bombard the MgO crystal target; after reaching the requirements, press the preset working oxygen partial pressure of 0.75×10 -2 Pa feeds oxygen from the oxygen port 14 and stabilizes the bombardment...

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Abstract

The invention discloses a preparation method of a MgO thin film which can improve the PDP statistical discharge delay time, the invention produces the dense and orderly MgO thin film mainly by using the doped MgO crystal and setting the appropriate oxygen partial pressure preparation parameter of 0.25 multiplied by 10<-2>Pa to 0.75 multiplied by 10<-2>Pa when in evaporation of an alternating current color plasma display base plate; compared with the current general method, the invention greatly shortens the statistical discharge delay time (jitter time).

Description

technical field [0001] The invention relates to a manufacturing technology of a shadow mask type color plasma display screen (i.e. PDP), in particular to a manufacturing method of a PDP dielectric protective film, in particular to a method for preparing a MgO thin film for improving the statistical discharge delay time of the PDP. Background technique [0002] At present, in the AC color plasma display (PDP), MgO film is used as the dielectric protective layer, and its characteristics are: 1) high electron emission coefficient; 2) high surface resistivity and volume resistivity; 3) resistance to ion bombardment; 4) impact High wear strength. The MgO film is directly in contact with the discharge gas, so it has an important effect on the working characteristics of the PDP, such as the working life, the stability of the working voltage, the bistable range of the working voltage, the ignition voltage and the statistical discharge delay time (jitter time). influences. Therefor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/00H01J9/02H01J17/02C23C14/24C23C14/08
Inventor 石吟馨李青哈姆·托勒朱立锋王保平宋明贵况亚伟张青和
Owner NANJING HUAXIAN HIGH TECH CO LTD