Semiconductor device with high-frequency interconnection

Abstract

The invention provides a semiconductor component, comprising high-frequency interconnections and a virtual conductor pattern (second virtual conductor pattern). The virtual conductor pattern is disposed in an interconnection layer which is different form an interconnection layer with the high-frequency interconnection. The virtual conductor pattern is configured to keep away from the area overlapping the high-frequency in a plane figure. In the interconnection layer with the high-frequency interconnection, the semiconductor component further includes a virtual conductor pattern (first virtualconductor pattern).

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to semiconductor devices having high-frequency interconnections and dummy conductor patterns. Background technique [0002] Figure 7 and 8 Each shows a plan view of a semiconductor device according to the prior art. In semiconductor device 100 , dummy conductor patterns 102 and 103 are provided near high-frequency interconnection 101 . Figure 7 shows the layers forming the high frequency interconnect 101, and Figure 8 Another layer is shown. exist Figure 8 , the region overlapping with the high-frequency interconnection 101 is indicated by a dotted line in plan view. [0003] The dummy conductor pattern 102 is provided in the same layer as the high-frequency interconnect 101 , and the dummy conductor pattern 103 is provided in a layer different from the layer in which the high-frequency interconnect 101 is provided. The dummy conductor pattern is provided for the pu...

AI Technical Summary

Problems solved by technology

Therefore, the circuit constant of the high-frequency interconnection 101 fluctuates, resulting in a change in the transmission characteristics of the high-frequency interconnection 101

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