Semiconductor device with high-frequency interconnection

Abstract

Provided is a semiconductor device including high-frequency interconnect and dummy conductor patterns (second dummy conductor patterns). The dummy conductor patterns are disposed in a interconnect layer different from a interconnect layer in which the high-frequency interconnect is disposed. The dummy conductor patterns are disposed so as to keep away from a region overlapping the high-frequency interconnect in plan view. The semiconductor device further includes dummy conductor patterns (first dummy conductor patterns) in the interconnect layer in which the high-frequency interconnect is disposed.

Description

Technical field [0001] The present invention relates to a semiconductor device, and more specifically, to a semiconductor device having high-frequency interconnections and dummy conductor patterns. Background technique [0002] Figure 7 with 8 Each shows a plan view of a semiconductor device according to the prior art. In the semiconductor device 100, the dummy conductor patterns 102 and 103 are provided in the vicinity of the high-frequency interconnection 101. Figure 7 Shows the layer forming the high frequency interconnect 101, and Picture 8 Another layer is shown. in Picture 8 , The area overlapping with the high-frequency interconnect 101 is indicated by a broken line in a plan view. [0003] The dummy conductor pattern 102 is provided in the same layer as the high-frequency interconnection 101, and the dummy conductor pattern 103 is provided in a layer different from the layer where the high-frequency interconnection 101 is provided. The dummy conductor pattern is provide...

AI Technical Summary

Problems solved by technology

Therefore, the circuit constant of the high-frequency interconnection 101 fluctuates, resulting in a change in the transmission characteristics of the high-frequency interconnection 101

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