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Method of preparing nano Bi2S3 film

A thin-film and nano-technology, applied in the field of preparation of nano-Bi2S3 thin film, to achieve the effect of uniform and compact composition, simple process equipment, and improved stability

Inactive Publication Date: 2009-04-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, the preparation of nano-Bi by electrodeposition 2 S 3 The preparation of thin films has not been reported

Method used

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  • Method of preparing nano Bi2S3 film
  • Method of preparing nano Bi2S3 film

Examples

Experimental program
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Effect test

Embodiment 1

[0013] Embodiment 1: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.0125mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1:5:1 molar ratio, under stirring, the pH value is adjusted to 4.5 to form a precursor solution, and the resulting solution is denoted as B; the B solution is placed in an electrodeposition device, and the ITO glass substrate is ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition. 2 S 3 Thin film; the deposition voltage is 1V, the deposition time is 20min, and after the deposition, the prepared film is natural...

Embodiment 2

[0015] Embodiment 2: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.2mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1:7:1 molar ratio, under stirring, the pH value is adjusted to 5.5 to form a precursor solution, and the resulting solution is denoted as B; the B solution is placed in an electrodeposition device, and the ITO glass substrate is ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition. 2 S 3 thin film; the deposition voltage is 3V, and the deposition time is 17min. After the deposition, the prepared film is naturally ...

Embodiment 3

[0016] Embodiment 3: first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.3mol / L, and the obtained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1:4:1 molar ratio, under stirring, the pH value was adjusted to 4.3 to form a precursor solution, and the resulting solution was denoted as B; the B solution was placed in an electrodeposition device, and the ITO glass substrate was ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition.2 S 3 film; the deposition voltage is 8V, and the deposition time is 13min. After the deposition, the prepared film is naturally drie...

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Abstract

The invention discloses a preparation method of a nano Bi2S3 thin film, which comprises the following steps of: adding the Bi(NO3)3 question mark 5H2O of analytically pure into distilled water for preparing an A solution; then adding the Na2S2O3 of the analytically pure and trisodium citrate into the A solution and regulating pH value to be 4.3-6.5 under stirring for preparing a B solution; placing the B solution in an electrodepositing device, ultrasonic washing an ITO glass substrate in ethanol, taking the ITO glass substrate as a cathode and graphite as an anode, and preparing the Bi2S3 thin film on the ITO glass substrate by using a mode of cathode constant voltage depositing; after finishing depositing, airing the prepared thin film in air and then obtaining the final product of the Bi2S3 thin film. The method adopts the electrodepositing method for preparing the Bi2S3 thin film with compact and even composition and oriented growth along (240) crystal face. Ultrasonic wave is adopted for assisting dissolving the Bi(NO3)3 question mark 5H2O, therefore nitric acid is not needed for dissolving so as to improve the stability of reaction solution, the pH value can be regulated in a large range, technical equipment is simple, in addition the method can prepare the Bi2S3 thin film high effectively with large area.

Description

technical field [0001] The present invention relates to a kind of nano Bi 2 S 3 The preparation method of material, be specifically related to a kind of nano Bi 2 S 3 The method of film preparation. Background technique [0002] Bi 2 S 3 It belongs to the orthorhombic (orthorhombic) crystal system, and the crystal is long columnar or needle-shaped. It is an important semiconductor material (direct band gap Eg=1.2~1.7ev) and has many potential applications such as photodiodes or photovoltaic cells, photocatalysts, Biolabels, electrochemical cells, etc. At present, the research on bismuth sulfide has received great attention. With Bi 2 S 3 The nanonization of nanoparticle can not only cause the blue shift of absorption wavelength and fluorescence emission, but also produce nonlinear optical response, enhance the redox ability of nanoparticles, and have better photocatalytic activity. It can be used in luminescent materials, nonlinear optical materials, Photocatalytic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
Inventor 黄剑锋王艳曹丽云朱辉殷立雄吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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