Method of preparing nano Bi2S3 film

A thin-film and nanotechnology, applied in the field of preparation of nano-Bi2S3 thin films, to achieve excellent photocatalytic activity and enhance redox ability

Inactive Publication Date: 2011-05-18
SHAANXI UNIV OF SCI & TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, the preparation of nano-Bi by electrodeposition 2 S 3 The preparation of thin films has not been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of preparing nano Bi2S3 film
  • Method of preparing nano Bi2S3 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.0125mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]:[S 2 o 3 2- ]:[C 6 h 5 o 7 3- ]=1:5:1 molar ratio, under stirring, the pH value was adjusted to 4.5 to form a precursor solution, and the resulting solution was denoted as B; the B solution was placed in an electrodeposition device, and the ITO glass substrate was ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition. 2 S 3 Thin film; the deposition voltage is 1V, the deposition time is 20min, and after the deposition, the prepared film is natur...

Embodiment 2

[0015] Embodiment 2: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.2mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]:[S 2 o 3 2- ]:[C 6 h 5 o 7 3- ]=1:7:1 molar ratio, under stirring, the pH value was adjusted to 5.5 to form a precursor solution, and the resulting solution was denoted as B; the B solution was placed in an electrodeposition device, and the ITO glass substrate was ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition. 2 S 3 thin film; the deposition voltage is 3V, and the deposition time is 17min. After the deposition, the prepared film is naturall...

Embodiment 3

[0016] Embodiment 3: first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator with a power of 100W for ultrasonic dispersion to prepare Bi 3+ Concentration is the transparent solution of 0.3mol / L, and the obtained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]:[S 2 o 3 2- ]:[C 6 h 5 o 7 3- ]=1:4:1 molar ratio, under stirring, the pH value was adjusted to 4.3 to form a precursor solution, and the resulting solution was denoted as B; the B solution was placed in an electrodeposition device, and the ITO glass substrate was ultrasonically cleaned in ethanol as As the cathode, graphite is used as the anode, and Bi is prepared on the ITO glass substrate by cathode constant voltage deposition. 2 S3 film; the deposition voltage is 8V, and the deposition time is 13min. After the deposition, the prepared film is naturally dried ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a nano Bi2S3 thin film, which comprises the following steps of: adding the Bi(NO3)3.5H2O of analytically pure into distilled water for preparing an A solution; then adding the Na2S2O3 of the analytically pure and trisodium citrate into the A solution and regulating pH value to be 4.3-6.5 under stirring for preparing a B solution; placing the B solution in an electrodepositing device, ultrasonic washing an ITO glass substrate in ethanol, taking the ITO glass substrate as a cathode and graphite as an anode, and preparing the Bi2S3 thin film on the ITO glass substrate by using a mode of cathode constant voltage depositing; after finishing depositing, airing the prepared thin film in air and then obtaining the final product of the Bi2S3 thin film. The method adopts the electrodepositing method for preparing the Bi2S3 thin film with compact and even composition and oriented growth along (240) crystal face. Ultrasonic wave is adopted for assisting dissolving the Bi(NO3)3.5H2O, therefore nitric acid is not needed for dissolving so as to improve the stability of reaction solution, the pH value can be regulated in a large range, technical equipment is simple, in addition the method can prepare the Bi2S3 thin film high effectively with large area.

Description

technical field [0001] The present invention relates to a kind of nano Bi 2 S 3 The preparation method of material, be specifically related to a kind of nano Bi 2 S 3 The method of film preparation. Background technique [0002] Bi 2 S 3 It belongs to the orthorhombic (orthorhombic) crystal system, and the crystal is long columnar or needle-shaped. It is an important semiconductor material (direct band gap Eg=1.2~1.7ev) and has many potential applications such as photodiodes or photovoltaic cells, photocatalysts, Biolabels, electrochemical cells, etc. At present, the research on bismuth sulfide has received great attention. With Bi 2 S 3 The nanonization of nanoparticle can not only cause the blue shift of absorption wavelength and fluorescence emission, but also produce nonlinear optical response, enhance the redox ability of nanoparticles, and have better photocatalytic activity. It can be used in luminescent materials, nonlinear optical materials, Photocatalytic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
Inventor 黄剑锋王艳曹丽云朱辉殷立雄吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap