Thin-film transistor liquid crystal display array substrate structure and method of manufacturing the same
A technology of thin-film transistors and liquid crystal displays, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as lower yields and defective pixels, and achieve the effects of shortening the cycle, reducing difficulty, and avoiding defective pixels
Inactive Publication Date: 2010-11-03
BOE TECH GRP CO LTD +1
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Problems solved by technology
However, the use of the slit lithography process puts forward higher requirements for the manufacturing accuracy of the mask plate, which increases the difficulty of process development, and because the slit transmittance in the slit lithography process will produce inhomogeneity, it is easy to cause Poor pixels, lower yield
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Embodiment Construction
[0066] Such as image 3 As shown, it is a flow chart of Embodiment 1 of the manufacturing method of the thin film transistor liquid crystal display array substrate of the present invention, the FFS type TFT-LCD array substrate manufacturing method, and the method specifically includes the following steps:
[0067] Step 1, depositing a first transparent conductive layer on the substrate, and forming a common electrode pattern by first photolithography and etching;
[0068] Step 2. Continuously deposit a gate metal layer, a gate insulating layer and an active layer on the substrate completed in step 1, and form gate patterns, gate line patterns, active layer patterns, and common electrode signals through the second photolithography and etching line graphics;
[0069] Step 3. Coating a polymer / organic material layer on the substrate completed in step 2; through a thinning process, the polymer / organic material layer is positioned on the gate pattern, the gate line pattern, the ac...
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Abstract
The invention relates to an array base plate structure of a thin-film transistor LCD and a production method thereof. The method comprises: a common electrode pattern is formed on a base plate through a first photolithographic process; a grid pattern, a grid line pattern, an active layer pattern and a common electrode signal wire pattern are formed on the base plate through a second photolithographic process; a polymer / organic material layer is coated on the base plate; a source electrode pattern, a drain electrode pattern and a data wire pattern are formed on the base plate through a third photolithographic process; a photoresist is remained, an ohimc contact layer is eroded and a thin-film transistor channel is formed; a passivation layer via hole pattern is formed through a fourth photolithographic process; and a pixel electrode pattern is formed through a fifth photolithographic process and connected to the drain electrode pattern through the passivation layer via hole. The array base plate structure of a thin-film transistor LCD and the production method thereof have simple process, shorten the production cycle and reduce the production cost.
Description
technical field [0001] The present invention relates to the field of liquid crystal display, in particular to a thin film transistor liquid crystal display (ThinFilm Transistor Liquid Crystal Display, TFT-LCD for short) array substrate structure and a manufacturing method thereof. Background technique [0002] Fringe Field Switching (FFS) type TFT-LCD has high light transmittance, wide viewing angle, no color shift, small crosstalk, With the advantages of fast response and low power consumption, FFS technology has become one of the mainstream technologies for high-quality LCDs. The traditional FFS-type TFT manufacturing process uses six photolithography processes, figure 1 Shown is the plan view of the prior art FFS type TFT-LCD array substrate, figure 2 shown as figure 1 In the cross-sectional view of A-A in the middle, the specific flow of the six photolithography processes is as follows: the first photolithography forms the common electrode pattern 2a, the second phot...
Claims
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IPC IPC(8): H01L21/84H01L21/768H01L27/12H01L23/522G02F1/1362
Inventor王章涛邱海军闵泰烨
OwnerBOE TECH GRP CO LTD