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High-voltage starting circuit with constant current control

A technology of constant current control and high voltage startup, applied in electrical components, output power conversion devices, etc., can solve problems such as high power consumption and burnout

Inactive Publication Date: 2011-06-22
NIKO SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As the output voltage rises with time, the gate-source voltage Vgs(Q1) of the junction transistor changes, so the output current will gradually decrease. In order to provide sufficient output current, the current limit point of the output current at the moment of startup must be increased. When a short circuit occurs at the output terminal It is easy to cause excessive power consumption and burn out

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Embodiment Construction

[0051] Figure 5As shown, it is a representative diagram of the specific application of the constant current control high-voltage starting circuit of the present invention, which includes a high-voltage junction transistor Q1, a control transistor Q5, a current detection unit R2, a bias resistor R1 and an energy storage capacitor C1, The high-voltage junction transistor Q1 may be a Junction Field Effect Transistor (JFET) or a depletion MOSFET (Depletion MOSFET), and JFET is used as an example for illustration. The drain of the high-voltage junction transistor Q1 is coupled to a high-voltage power supply VIN, and the source is coupled to the current detection unit R2. The current detection unit R2 is provided by a voltage drop generated by the current of the high-voltage junction transistor Q1 flowing through the two ends of the current detection unit R2. The gate-source negative bias of the high-voltage junction transistor Q1 makes the high-voltage junction transistor Q1 outpu...

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Abstract

The invention discloses a high-voltage starting circuit with constant current control, which is applied to a switch power supply. The high-voltage starting circuit comprises a high-voltage junction transistor, a control transistor, a current detecting resistor and a bias resistor, wherein a drain pole of the high-voltage junction transistor is coupled with a high-voltage power supply, a grid poleis coupled to the drain pole of the control transistor, and a source pole is coupled to the current detecting resistor; the current detecting resistor supplies the negative bias of the grid-source pole of the high-voltage junction transistor by constant voltage drop generated in a such a way that the current of the high-voltage junction transistor flows across both ends of the detecting resistor and enables the high-voltage junction transistor to output constant current; one end of the bias resistor is coupled to the grid pole of the high-voltage junction transistor, and the other end is coupled to the output end of the high-voltage starting circuit so that the grid pole voltage of the high-voltage junction transistor is equal to output voltage and the grid-source pole of the high-voltagetransistor maintains the constant negative bias so as to supply the constant output current.

Description

technical field [0001] The invention relates to a high-voltage starting circuit with constant current control, which is applied to a switching power supply, and can be used for a high-voltage power supply with a wide input range to generate a constant current output, so that the output current and time of the starting circuit are fixed, and it can prevent short circuit at the output end. The output current caused by abnormality is too large and the components are damaged. Background technique [0002] see figure 1 , which is one of the existing high-voltage starting circuits. Such as figure 1 As shown, this existing high-voltage start-up circuit uses a high-voltage junction transistor gate-source negative bias to limit the output current, and includes a high-voltage junction transistor Q1, a first metal-oxide-semiconductor field-effect transistor Q2, and a second MOSFET Q3, a bias resistor R1, a PNP transistor Q4, a Zener diode ZD1, and a hysteresis comparator COMP1. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/00H02M1/32
Inventor 徐达经
Owner NIKO SEMICON