Ternary oxide nano material, ternary oxide nano structure and preparation method thereof

A ternary oxide and nanostructure technology, which is applied in the field of ternary oxide nanostructures, can solve the problems of significant impact on the performance of nanostructure arrays, limited applications, and high costs.

Inactive Publication Date: 2010-06-09
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
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Problems solved by technology

It can be seen that the characteristics and process of growing one-dimensional nanostructures by traditional CVD methods have certain limitations and shortcomings: 1. Different types of nanostructures have strong selectivity to catalysts; 2. The size of nanostructures depends on the catalyst Particle size; 3. Special catalyst coating and growth equipment are required, and the cost is high; 4. It is difficult to grow ternary or more nanowires; 5. The existence of catalyst particles has a significant impact on the performance of nanostructure arrays. Limited; 6. Large-area preparation is limited by the size of coating equipment and growth equipment, the cost increases sharply, and the growth process is complicated

Method used

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  • Ternary oxide nano material, ternary oxide nano structure and preparation method thereof
  • Ternary oxide nano material, ternary oxide nano structure and preparation method thereof
  • Ternary oxide nano material, ternary oxide nano structure and preparation method thereof

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Embodiment 1

[0028] Using MoO with a purity of 99.99% produced by Beijing Chemical Reagent Company 3 The powder is an oxide of metal B, and the metal foil is a copper foil with a purity of 99.9% and a thickness of about 100 microns produced by China Chemical Reagent Co., Ltd., with a diameter of 10 cm. Among them, the copper foil is used as both the substrate and one of the reaction components.

[0029] The preparation of the ternary oxide nanostructures of the present invention is carried out in air. In the air, the copper foil was placed in the MoO 3 On the crucible of the powder, the crucible was heated to 500°C for 2 hours, the crucible was taken out, and Cu was formed on the copper foil.3 Mo 2 o 9 The ternary oxide nanowire material, the nanomaterial is in the form of an array or a quasi-array, for specific forms see image 3 Cu 3 Mo 2 o 9 Photographs of nanomaterials. Figure 4 Shows the elemental analysis diagram of the ternary oxide nanowire material prepared by this method,...

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Abstract

The invention provides a ternary oxide nano structure. The nano structure is a compound with a molecular formula of AxByOz, wherein A is Cu, Fe, Co, Ni or Zn; B is Mo; xa+yb=2z; and a and b are the valence states of metal elements A and B respectively. The invention also provides a method for preparing the nano structure. The invention also provides a nano material which comprises the nano structure. The nano structure is a ternary nano structure, and the nano material is a ternary nano material. The preparation method does not need any catalyst, is simple and has a low cost.

Description

technical field [0001] The invention relates to a ternary oxide nanostructure, a nanomaterial and a preparation method of the nanostructure. Background technique [0002] With the rapid development of nanoscience and technology, the preparation and application of one-dimensional nanostructure arrays have attracted more and more attention. This one-dimensional nanostructure array or quasi-array has various uses according to different material systems, and can be used as field emission devices, various biological and gas sensors, nanometer power generation devices, and magnetic storage components. Therefore, research on the growth methods and properties of various one-dimensional nanostructure arrays has been widely carried out in the world, and it has become one of the research hotspots in nanomaterial science and technology. [0003] At present, the methods for preparing one-dimensional nanostructure arrays mainly include solution method and chemical vapor deposition (CVD) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G1/02
Inventor 褚卫国王汉夫
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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