Nano-cavity laser of molecule-doped thin film layer with electroexcitation

An electro-excitation, thin-film layer technology, applied in the field of lasers, can solve the problems of difficult manufacturing process, high cost, difficulty in electro-excitation, etc.

Inactive Publication Date: 2012-09-19
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In order to solve the above problems, the present invention provides an electro-excited molecule-doped thin-film layer nanocavity laser, which can effectively solve the existing problems of electro-excitation difficulties, difficult manufacturing process, high cost, and difficult promotion.

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  • Nano-cavity laser of molecule-doped thin film layer with electroexcitation
  • Nano-cavity laser of molecule-doped thin film layer with electroexcitation

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Embodiment Construction

[0012] The specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0013] Such as figure 1 Shown: electro-excited molecule-doped thin-film layer nanocavity laser, including p-face electrode 1, substrate 2, electroluminescence medium 3, molecule-doped thin-film layer 4, n-face electrode 5 and nanowire structure 6; substrate Electroluminescence medium 3, molecular doped thin film layer 4, n-face electrode 5 and nanowire structure 6 are sequentially grown on the top of substrate 2, and p-face electrode 1 is plated on the bottom of substrate 2.

[0014] The molecular doped thin film layer 4 has very little loss to electromagnetic field propagation, the dielectric constant of the thin film layer is smaller than that of the electroluminescent medium, and the ratio d / n of its thickness d to the refractive index n of the thin film layer is less than 50nm, forming a nanocavity structure. The molecules...

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Abstract

The invention, which belongs to the laser field, relates to a nano-cavity laser of a molecule-doped thin film layer with electroexcitation. The laser comprises a p-surface electrode, a substrate, an electroluminescent medium, a molecule-doped thin film layer, an n-surface electrode, and a nanowire structure. The electroluminescent medium, the molecule-doped thin film layer, the n-surface electrode, and the nanowire structure are arranged on the surface of the substrate successively; and the underneath of the substrate is plated with the p-surface electrode. According to the invention, surfaceplasma is provided by a metal electrode; an electric field with strong localization is formed by utilizing a mixing structure of metal, low-dielectric constant thin film layer and electroluminescent medium. Multi-energy-level molecules are doped in an insulating layer; multi-energy-level molecule system is excited to absorb a photon; and transition is formed and another photon is emitted. Direct coupling is carried out on the emitted photon, so that surface plasmon is formed; and the surface plasmon is transmitted and lased along the metal surface of the nanowire. According to the invention, present problems including difficulty in electroexcitation, great difficult in making technology, high cost, and difficulty in promotion are effectively solved.

Description

technical field [0001] The invention belongs to the field of lasers, in particular to an electrically excited molecule-doped thin-film layer nanocavity laser. Background technique [0002] With the development and maturity of nano-microprocessing technology, the miniaturization of lasers is developing faster and faster. Subwavelength microcavity and nanocavity lasers based on surface plasmon polaritons (Surface Plasmon Polariton, SPP) are due to their High sensitivity, small size, and concentrated energy are more used in the fields of biological detectors, information storage, optical computing, near-field optical imaging, nano-lithography technology and molecular manipulation technology; and, with the development of science and technology, There is a growing demand for ultra-compact laser light sources in more and more fields. [0003] Due to the limitation of light wavelength and the influence of diffraction effect, traditional lasers in general sense cannot compress lase...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/06H01S3/16H01S3/09
Inventor 陈泳屹秦莉王立军宁永强刘云
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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