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Electronic-control tunable photonic crystal wavelength division multiplexer and manufacturing method thereof

A technology of wavelength division multiplexer and photonic crystal, which is applied in light guides, optics, instruments, etc., can solve the problems of low nonlinear coefficient and low response speed, simplify the process and device structure, avoid end-face coupling, and be highly efficient and adjustable Effects of Harmonic Division Multiplexing

Inactive Publication Date: 2013-06-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional nonlinear materials, such as nonlinear crystals, have disadvantages such as low nonlinear coefficient and low response speed

Method used

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  • Electronic-control tunable photonic crystal wavelength division multiplexer and manufacturing method thereof
  • Electronic-control tunable photonic crystal wavelength division multiplexer and manufacturing method thereof
  • Electronic-control tunable photonic crystal wavelength division multiplexer and manufacturing method thereof

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Embodiment Construction

[0024] see figure 1 and figure 2 , the present invention provides a specific structure of an electronically controlled tunable photonic crystal wavelength division multiplexer working in the C-band of optical communication, including:

[0025] A thin metal transparent electrode layer 11;

[0026] A polymer layer 12, located below the thin metal transparent electrode layer 11;

[0027] A top-layer silicon layer 13, an array of photonic crystal holes 16 is opened on the top-layer silicon layer 13, and the top-layer silicon layer 13 is located below the polymer layer 12;

[0028] A silicon dioxide layer 14, which is a ring structure, is located around the bottom of the top silicon layer 13, so that the silicon dioxide layer 14 does not block the photonic crystal hole array 16;

[0029] A substrate silicon layer 15 is a ring structure, located under the ring silicon dioxide layer 14 .

[0030] The silicon dioxide layer 14 has a thickness of 1 μm-2 μm, and the top silicon laye...

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Abstract

The invention provides an electronic-control tunable photonic crystal wavelength division multiplexer. The wavelength division multiplexer comprises a thin metal transparent electrode layer, a polymer layer, a top silicon layer, a silicon dioxide layer and a substrate silicon layer, wherein the polymer layer is positioned under the thin metal transparent electrode layer; a photonic crystal pore array is formed on the top silicon layer, and the top silicon layer is positioned under the polymer layer; the silicon dioxide layer with an annular structure is positioned on the periphery of the lower side of the top silicon layer, so that the silicon dioxide layer does not block the photonic crystal pore array; and the substrate silicon layer with an annular structure is positioned under the annular silicon dioxide layer.

Description

technical field [0001] The invention relates to the technical fields of optical nonlinearity, photonic crystal resonant conduction, wavelength division multiplexing and optical communication, in particular to an electronically controlled tunable photonic crystal wavelength division multiplexer and a manufacturing method thereof. Background technique [0002] With the development of information technology, the requirements for information transmission continue to increase, and wavelength division multiplexing technology has become one of the most important methods to effectively improve the efficiency of information transmission in the field of optical fiber communication. At the same time, wavelength division multiplexing devices play an extremely important role in the field of optical communications. [0003] Because two-dimensional photonic crystals can form a photonic band gap in a plane, and can form high-quality uplink and downlink filters through manufacturing defects,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/025G02F1/361G02B6/122G02B6/138
Inventor 许兴胜高永浩李成果
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI