Method for performing data shaping and related memory device as well as controller thereof
A data shaping and memory device technology, applied in the field of flash memory access, can solve problems such as reading errors, writing errors, and input seeds cannot be generated correctly, and achieve the effect of saving costs and reducing errors
Active Publication Date: 2014-09-10
SILICON MOTION INC (CN)
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Problems solved by technology
For example, users may constantly write data with certain specific data types based on their usage habits, and these specific data types are particularly prone to errors (such as: writing errors, reading errors, etc. ); although a random function generator (Randomizer) is provided in the memory device to adjust the data in order to solve such problems, due to the traditional low-cost design, the adjusted data is not random enough
In addition, once the internal data of the flash memory needs to be moved, there may be a problem that the input seed (Seed) of the random function generator cannot be generated correctly, resulting in data errors
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[0046] Please refer to Figure 1A , Figure 1A It is a schematic diagram of a memory device 100 according to a first embodiment of the present invention, wherein the memory device 100 of this embodiment can be a portable memory device, for example: a memory device conforming to SD / MMC, CF, MS, XD standards Card, or Universal Serial Bus Flash Drive (USB Flash Drive, also known as USB Flash Disk), the so-called flash drive, but not limited thereto. The memory device 100 includes: a flash memory (Flash Memory) 120 ; and a controller for accessing the flash memory 120 , wherein the controller is, for example, a memory controller 110 . According to the present embodiment, the memory controller 110 includes a microprocessor 112 , a read only memory (ROM) 112M, a control logic 114 , a buffer memory 116 , and an interface logic 118 . In addition, the control logic 114 includes an adjustment unit 114A, an encoder 114E, a seed generator (Seed Generator) 114G, and at least one randomizer...
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The invention provides a method for performing data shaping, wherein the method is applied to a controller of a flash memory, and the flash memory comprises a plurality of blocks. The method comprises the steps of: generating / reacquiring an input seed of at least one randomizer / derandomizer according to the content of data to be written in or read out from the flash memory; and generating a random function according to the input seed by utilizing the randomizer / derandomizer so as to regulate a plurality of bits of the data bit by bit. The invention further provides a related memory device and a controller thereof. In the invention, by means of the proper design of a sequence of the random function and a seed generator / seed reacquiring device as well as the assistance of related data stream control, the appropriate data pattern management can be performed specific to the data to be accessed by the controller, so that errors are reduced. In addition, the invention has the advantages that a large number of extra cost cannot be increased, and even the cost can be better saved in comparison with that of related technologies.
Description
technical field [0001] The present invention relates to the access (Access) of flash memory (Flash Memory), and more specifically, relates to a method for performing data shaping (Data Shaping), a related memory device and its controller. Background technique [0002] In recent years, due to the continuous development of flash memory technology, various portable memory devices (for example: memory cards conforming to SD / MMC, CF, MS, XD standards) or solid state drives (Solid State Drive, SSD) with flash memory are widely used implemented in many applications. Therefore, the access control of the flash memory in these memory devices has become a very hot topic. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) and multiple level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory unit, has on...
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IPC IPC(8): G06F11/10
Inventor 杨宗杰
Owner SILICON MOTION INC (CN)