Method for suppressing data error and related memory device and controller of memory device

Abstract

The invention relates to a method for suppressing data error and a related memory device and a controller of the memory device. The method is applied to a controller of a flash memory, wherein the flash memory comprises a plurality of blocks; the method comprises the following steps of: judging whether an original seed is utilized as an input seed of a randomizer / derandomizer according to an address of data to be written into the flash memory / to be read from the flash memory, wherein the randomizer / derandomizer is used for generating a random function according to the input seed so as to adjust a plurality of bits of the data bit by bit, and the value of the original seed is constant aiming at each block in at least the blocks; and generating the random function according to a new seed to adjust the data when judging that the original seed is not utilized as the input seed. By adopting the method, proper data pattern management can be performed on the data accessed by the controller, so that the probability of error is reduced, the overall cost is not increased too much.

Description

technical field [0001] The present invention relates to the access of flash memory (Flash Memory), more specifically, to a method for suppressing data errors, a related memory device and its controller. Background technique [0002] In recent years, due to the continuous development of flash memory technology, various portable memory devices (for example: memory cards conforming to SD / MMC, CF, MS, XD standards) or solid state hard drives (Solid State Drive, SSD) with flash memory are widely used. implemented in many applications. Therefore, the access control of the flash memory in these memory devices has become a very hot topic. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) and multiple level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory unit, has only two charge values, which ar...

AI Technical Summary

Problems solved by technology

For example, users may constantly write data with certain specific data types based on their usage habits, and these specific data types are particularly prone to errors (such as: writing errors, reading errors, etc. ); although a random function generator (Randomizer) is provided in the memory device to adjust the data in order to solve such problems, due to the traditional low-cost design, the adjusted data is not random enough

According to a typical implementation of the related technology, for each sector (Sector), the value of the input seed (Seed) of the random function generator is constant (that is, for each sector, the input seed remains the same a value), so the above problem has not really been solved

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