High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification

A traveling wave amplifier and pulse amplification technology, which is applied to lasers, laser parts, phonon exciters, etc., can solve problems such as unbearable high pump power, poor laser spot quality, small amplification gain, etc., and achieve output Excellent spot quality, high amplification gain, and good stability

Active Publication Date: 2012-06-20
苏州贝林激光有限公司
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AI Technical Summary

Problems solved by technology

In order to obtain high gain and high peak power, the gain medium of the traveling wave amplifier is generally a slab structure, but the slab structure needs to reshape the amplified laser multiple times, which will cause the quality of the laser spot to deteriorate
This problem can be solved by end-pumping Nd:YVO4, but due to the thermal stress of the Nd:YVO4 end face, it cannot withstand high pump power (less than 40W), and the amplification gain is very small

Method used

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  • High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification
  • High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification

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Embodiment Construction

[0014] The invention designs a high-gain two-way traveling-wave amplifier suitable for picosecond laser pulses. The amplification gain can reach 1000 times, and the peak power of the laser can be amplified from kW to MW level. The output amplified laser is stable, the beam quality is excellent, and the structure is simple.

[0015] Such as figure 1 As shown, a high-gain two-way traveling wave amplifier for picosecond laser pulse amplification includes a semiconductor diode pump source 1, a laser crystal 5 and a picosecond seed source 13, and the semiconductor diode pump source 1 is connected to the first lens 2, and the first lens 2 connected to the second lens 3, the second lens 3 connected to the first plane mirror 4, the first plane mirror 4 connected to the laser crystal 5, the laser crystal 5 connected to the third lens 6, the third lens 6 connected to the second plane mirror 7, picosecond seed source 13 The film polarizer 12 is connected, the film polarizer 12 is connect...

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Abstract

The invention relates to a high-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification. A semiconductor diode pumping source is joined with a first lens; the first lens is joined with a second lens; the second lens is joined with a first plane mirror; the first plane mirror is joined with a laser crystal; the laser crystal is joined with a third lens; the third lens is joined with a second plane mirror; a picosecond seed source is joined with a thin film polaroid; the thin film polaroid is joined with a Faraday optical rotator; the Faraday optical rotator is joined with a sixth lens; the sixth lens is joined with a fifth lens; the fifth lens is joined with a fourth lens; and the fourth lens is joined with the first plane mirror. According to the invention, the seed laser is subjected to beam expansion and focusing by utilizing the lens combination, the overlapping of seed optical pumping lights in a crystal is realized; at the same time, the surplus pumping lights are reflected to the inner part of the crystal for reuse by utilizing the combination of the lenses and reflection mirrors; and the high-gain double-stroke traveling-wave amplifier has the advantages of high amplification gain, outstanding output facula quality, good stability and the like.

Description

technical field [0001] The invention relates to a high-gain two-way traveling-wave amplifier for picosecond laser pulse amplification, which belongs to the technical field of solid-state laser amplification. Background technique [0002] With its high peak power and narrow pulse width, high-energy picosecond lasers have been widely used in fine micromachining of materials, LED scribing, solar photovoltaics, scientific research and other fields. Compared with nanosecond laser, the use of picosecond laser to process materials has the advantages of high precision, extremely small heat-affected area, and no burrs on the processing edge. [0003] In order to meet the above-mentioned applications, the peak power of picosecond lasers is generally required to reach the MW level. The current principle of generating picosecond lasers with MW-level peak power is to select kHz from a mode-locked seed source laser of tens of MHz and through electro-optic modulation. to hundreds of kHz ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/094H01S3/00
Inventor 赵裕兴李立卫
Owner 苏州贝林激光有限公司
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