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D-TDI (digital time-delay and integration) controller for color plane array CMOS (complementary metal-oxide-semiconductor transistor) sensor

A technology of CMOS sensor and integral controller, applied in the field of integral controller, can solve the problem that digital domain accumulation cannot be used

Active Publication Date: 2012-10-10
CHANGGUANG SATELLITE TECH CO LTD
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its unique structure, color CMOS cannot realize digital domain accumulation by means of ordinary line-by-line accumulation.

Method used

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  • D-TDI (digital time-delay and integration) controller for color plane array CMOS (complementary metal-oxide-semiconductor transistor) sensor
  • D-TDI (digital time-delay and integration) controller for color plane array CMOS (complementary metal-oxide-semiconductor transistor) sensor
  • D-TDI (digital time-delay and integration) controller for color plane array CMOS (complementary metal-oxide-semiconductor transistor) sensor

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Embodiment Construction

[0029] Such as figure 2 As shown, the TDI integral controller in the digital domain of the color area array CMOS sensor of the present invention includes a serial-to-parallel conversion module, a channel integration module, a spectral segment separation module, an RG channel integration direction control module, a GB channel integration direction control module, and an RG flow accumulator , GB pipeline accumulator, spectrum synthesis module.

[0030] In order to increase the image frame rate, high-speed CMOS cameras generally adopt a multi-channel output mode, some even as high as 16 channels or even more. In order to reduce the number of buffers in the later D-TDI algorithm, it is necessary to perform channel multiplexing on image data to complete image splicing.

[0031] Since high-speed color area array CMOS sensors generally use LVDS serial mode to output image data, in order to realize D-TDI processing, it is necessary to perform serial-to-parallel conversion first to o...

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Abstract

The invention relates to a D-TDI (digital time-delay and integration) controller for a color plane array CMOS (complementary metal-oxide-semiconductor transistor) sensor. A serial-parallel conversion module of the controller converts serial image data output by the color planar array CMOS sensor into parallel image data streams; a spectral-range separation module carries out separation on image data in odd-numbered rows and image data in even-numbered rows in parallel image data; a RG stream accumulator and a GB stream accumulator respectively carry out time delay and accumulative integration on the image data in the odd-numbered rows and the image data in the even-numbered rows, and a D-TDI integration result is output; and a spectral-range synthesis module carries out channel multiplexing on the D-TDI integration result at RG and GB spectral ranges so as to generate a Bayer-type color image. According to the invention, the odd-numbered rows and even-numbered rows of a CMOS image are processed respectively through two parallel channels so as to complete the D-TDI (digital time-delay and integration) of a RG channel and a GB channel, so that any even-numbered-level time delay and integration of a color CMOS chip can be realized.

Description

technical field [0001] The invention belongs to the technical field of digital-domain time-delay integration of CMOS chips, and relates to an integral controller suitable for digital-domain time-delay integration (Digital Time-Delay and Integration D-TDI) of color CMOS. Background technique [0002] Aerospace and aviation remote sensing cameras mostly use TDI CCD as the photoelectric sensor device, and the exposure time is increased by time delay integration to improve the image signal-to-noise ratio. However, TDI CCD has disadvantages such as large power consumption, complex peripheral drive circuit, and single imaging mode. Its traditional position is being challenged by new photoelectric sensors such as CMOS. Since CMOS photoelectric sensors use standard semiconductor processes and rely on a huge semiconductor industry chain, In recent years, it has achieved rapid development, and its market share has greatly surpassed that of CCD, and it has made great progress in high i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/353H04N5/374H04N5/378
Inventor 贺小军曲宏松金光王金玲陶淑平
Owner CHANGGUANG SATELLITE TECH CO LTD
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