Inverted figure-eight terahertz wave filter
A figure-of-eight, terahertz technology, applied in the field of terahertz wave filters, can solve problems such as high loss, complex structure, and difficult manufacturing process, and achieve the effects of low insertion loss, easy integration, and excellent narrowband bandpass filter characteristics
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0017] Inverted figure-of-eight terahertz wave filter:
[0018] The material of the substrate is high-resistance silicon with a refractive index of 3.42. The high-resistance silicon substrate has a length of 2000 μm, a width of 1200 μm, and a thickness of 300 μm. The etching width of the inverted 8-shaped groove is 60 μm, and the etching thickness is 100 μm; the outer radius r1 of the upper left half-arc groove is equal to the outer radius r1 of the lower right half-arc groove, both of which are 400 μm; the lower left The outer radius r2 of the side semi-arc groove is equal to the outer radius r2 of the upper right semi-arc groove, both of which are 450 μm. The side length of the equilateral triangular groove is 80 μm, and the etching thickness of the equilateral triangular groove is 100 μm. The number of equilateral triangular grooves in the upper left triangular groove array and the lower right triangular groove array is 19, and the number of equilateral triangular grooves...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com
