Method for preparing electrode on single nano wire

A technology for preparing electrodes and nanowires, which is applied in the fields of nanotechnology, nanotechnology, and nanotechnology for information processing, and can solve the problems of reducing the success rate of nanowire electrodes.

Inactive Publication Date: 2015-07-01
XI AN JIAOTONG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nanolithography technology based on electron beam exposure has received extensive attention, but this process often randomly disperses nanowires on the substrate without any fixed measures, so in subsequent processes, nanowires often move due to various reasons or detachment, which greatly reduces the success rate of using this method to prepare nanowire electrodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing electrode on single nano wire
  • Method for preparing electrode on single nano wire
  • Method for preparing electrode on single nano wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be further described below in conjunction with drawings and embodiments.

[0029] see Figure 1-Figure 4 , including the following steps:

[0030] 1) Ultrasonic dispersion of CdS nanowires in isopropanol (IPA) with an ultrasonic power of 60W for 2 minutes to form a suspension of nanowires. The solvent used to disperse the nanowires is not limited to IPA, as long as it does not react with the nanowires and can form a stable nanowire suspension. The nanowires mentioned in the present invention are not limited to specific materials, as long as the nanowires can be used in the process.

[0031] 2) Clean the insulating substrate: the insulating substrate is made of a glass substrate covered with a 300nm-thick silicon nitride film, and the insulating substrate is ultrasonically cleaned for 10 minutes in the order of acetone, ethanol, and deionized water. After cleaning, use N 2 Blow dry and bake on a hot plate at 80°C for 20 minutes to remove sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing an electrode on a single nano wire. The method is used for preparing the electrode at a specific position on the nano wire so as to realize electrical contact and is implemented mainly by virtue of micro-nano manufacturing processes such as nano wire transfer, nano wire dispersion, electron beam photoengraving and nesting, and nano film deposition. The method is mainly characterized in that an Al film is used as a conductive layer for electron beam photoengraving, a protective layer of the nano wire, and a undercut layer for a stripping process; and by utilizing the method, the alignment precision of the electrode and the nano wire and the success rate of preparation can be obviously improved. The method can be used for preparing nano wire solar batteries, photoelectric detectors, light-emitting diodes, lasers, sensors and the like.

Description

technical field [0001] The invention relates to frontier research fields such as nano-optoelectronics, micro-nano sensing technology, micro-electronics and micro-nano processing, and the synthesis and preparation of one-dimensional nanomaterials, and specifically relates to a method for preparing electrodes on single nanowires. Background technique [0002] Nanowires are one-dimensional nanostructures whose radial dimension is on the order of nanometers and whose length direction is not limited. As an important nanomaterial, although it has been less than 20 years since its discovery, it has received widespread attention in various fields due to its special properties in biochemistry, mechanics, electromagnetics, and optoelectronics. . In 2001, "Nature" magazine reported that Yang Peidong's group at the University of California, Berkeley had developed the world's smallest room-temperature ultraviolet laser based on ZnO nanowires, which showed good laser performance. In 200...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/28H01L21/44B82Y10/00
Inventor杨树明李磊韩枫胡庆杰蒋庄德
OwnerXI AN JIAOTONG UNIV