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A three-valued three-state gate circuit based on cnfet

A three-state gate circuit and base technology, applied in the field of gate circuits, can solve the problem of small information amount of binary circuits, and achieve the effect of meeting the requirements of information capacity

Active Publication Date: 2016-03-23
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the three-state gate circuits currently designed are mostly binary circuits, and the amount of information carried by the binary circuits is small, which cannot meet the requirements of modern integrated circuits for large information capacity.

Method used

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  • A three-valued three-state gate circuit based on cnfet
  • A three-valued three-state gate circuit based on cnfet

Examples

Experimental program
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Effect test

Embodiment

[0013] Example: such as figure 1As shown, a CNFET-based three-value three-state gate circuit includes an inverter, a first CNFET tube T1, a second CNFET tube T2, a third CNFET tube T3, a fourth CNFET tube T4, a fifth CNFET tube T5, The sixth CNFET tube T6, the seventh CNFET tube T7, the eighth CNFET tube T8, the ninth CNFET tube T9, the tenth CNFET tube T10, the eleventh CNFET tube T11, the twelfth CNFET tube T12, and the thirteenth CNFET tube T13 , the fourteenth CNFET tube T14 and the fifteenth CNFET tube T15, the first CNFET tube T1, the fourth CNFET tube T4, the fifth CNFET tube T5, the ninth CNFET tube T9, the eleventh CNFET tube T11, and the twelfth CNFET tube The tube T12 and the fifteenth CNFET tube T15 are N-type CNFET tubes, the second CNFET tube T2, the third CNFET tube T3, the sixth CNFET tube T6, the seventh CNFET tube T7, the eighth CNFET tube T8, and the tenth CNFET tube T10 1. The thirteenth CNFET tube T13 and the fourteenth CNFET tube T14 are P-type CNFET tub...

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Abstract

The invention discloses a three-valued three-state gate circuit based on CNFETs. According to the three-valued three-state gate circuit, the output state is controlled through an enabling port, when FEN is equal to zero, input In is equal to one at a control enabling end, the fifth CNFET, the sixth CNFET, the eighth CNFET and the ninth CNFET are turned on, output is connected to the twelfth-fifteenth CNFETs at a next level, through two-level transmission, the obtained output value is 'one', when the input In is equal to zero or two, only the third CNFET, the fourth CNFET, the tenth CNFET and the eleventh CNFET work, in this way, through two-level phase opposition, the output out is equal to In, when the FEN is equal to one, all the CNFETs are turned off, the output is in a suspension state and a high resistance value 'Z', and therefore the functions of a three-valued three-state gate are achieved through the CNFETs. The three-valued three-state gate circuit based on the CNFETs has the advantages of being capable of carrying a large amount of information and meeting the requirement for the large information capacity of a modern integrated circuit.

Description

technical field [0001] The invention relates to a gate circuit, in particular to a CNFET-based tri-value tri-state gate circuit. Background technique [0002] With the rapid increase of the number of components on the integrated circuit chip, the connection between the internal active devices and the external silicon chip becomes very complicated, and the wiring area is also increasing. The emergence of multi-valued logic provides a new way to solve these problems. Multi-valued logic can increase the single-line transmission information capacity of the circuit, increase the information density of digital circuits, and then reduce the chip area and lead number of integrated circuits. Too many pins have a serious impact on some VLSIs. The application of multi-valued logic can greatly reduce the number of external pins and improve the space and time utilization of the circuit. According to Richards' calculation method, the number of signal values ​​is 3 is the best choice. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/20
Inventor 汪鹏君唐伟童郑雪松
Owner NINGBO UNIV
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