Preparation method for Ga-doped ZnO texture thermoelectric material

A thermoelectric material and texture technology, which is applied in the ion sintering process to prepare Ga-doped ZnO textured thermoelectric materials, can solve the problems of large grain size and reduced thermal conductivity

Inactive Publication Date: 2015-04-08
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the grain size of the above-mentioned textured bulk materials is relatively large, generally 1-20 μm, which is not conducive to the reduction of thermal conductivity.
At present, the preparation of Zn with both nanometer and textured structure characteristics 1-x Ga x O bulk thermoelectric materials are rarely reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for Ga-doped ZnO texture thermoelectric material
  • Preparation method for Ga-doped ZnO texture thermoelectric material
  • Preparation method for Ga-doped ZnO texture thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] First, a hydrothermal method was used to prepare Ga-doped ZnO nanocomposite spheres as precursor powder, and zinc acetate (Zn(CH 3 COO) 2 ·2H 2 O) (mass fraction greater than 99%) and gallium nitrate (Ga(NO 3 ) 3 ·XH 2 O) (mass fraction greater than 99%) as the raw material, according to the general chemical formula Zn 1-x Ga x O(0.001≤x≤0.5mol) configuration, triethanolamine ((HOCH 2 CH 2 ) 3 N) As a surfactant, deionized water is used as a solvent to prepare Ga-doped ZnO nanocomposite spherical precursor powder in a hydrothermal kettle. The nanocomposite spherical structure is characterized by self-assembly of 10-800nm ​​nanoparticles The diameter of the nano-composite sphere is 1-10 μm, and the (00l) axis of the nano-particles are arranged radially along the diameter direction of the micro-sphere. The nano-micro composite spherical precursor powder is subjected to spark plasma sintering to obtain a Ga-doped ZnO bulk material with a grain size of 100-900 nm and a texture...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method for a Ga-doped ZnO texture thermoelectric material and belongs to the technical field of energy source materials. The preparation method is characterized in that zinc acetate and gallium nitrate are used as raw materials and are prepared according to a chemical formula Zn1-xGaxO, wherein x is more than or equal to 0.001mol and less than or equal to 0.5mol; triethanolamine is used as a surfactant and de-ionized water is used as a solvent; the pH (Potential of Hydrogen) value is 7.0-9.0; a hydrothermal reaction is carried out at 120-240 DEG C for 4-80 hours; nano-micro composite spherical powder with the diameter of 1-10 microns, which is formed by self-assembly of nano particles with the size of 10nm-800nm, is prepared; a Ga-doped ZnO block material with the texture degree of 10%-55% is prepared by using a discharging plasma sintering technology under the pressure of 30MPa-200MPa and at temperature of 850-1400 DEG C, and keeping the heat and sintering for 1-30 minutes; the grain size is 100nm-900nm. According to the method, the Ga-doped ZnO block material with nano and texture structural characteristics can be simply and rapidly prepared; the carrier mobility is improved and the heat conductivity is reduced; the thermoelectric property can be improved.

Description

Technical field [0001] The invention belongs to the technical field of energy materials, and particularly relates to a method for preparing Ga-doped ZnO textured thermoelectric materials, and relates to a hydrothermal synthesis method and a spark plasma sintering process. Background technique [0002] With the rapid development of industrialization, energy and environmental issues have become one of the important issues of human society. Thermoelectric material is a kind of functional material that directly realizes the mutual conversion of heat energy and electric energy. Thermoelectric devices made of thermoelectric materials can output electrical energy through the Seebeck effect in the presence of a temperature gradient, and are called thermoelectric batteries. On the other hand, thermoelectric devices can also generate temperature differences through the Peltier effect to achieve electronic cooling. Thermoelectric conversion has the characteristics of small device size, hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 张波萍张代兵张雨桥陈茜
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products