Preparation method for Ga-doped ZnO texture thermoelectric material

A thermoelectric material and texture technology, which is applied in the ion sintering process to prepare Ga-doped ZnO textured thermoelectric materials, can solve the problems of large grain size and reduced thermal conductivity

Inactive Publication Date: 2014-04-09
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, the grain size of the above-mentioned textured bulk materials is relatively large, generally 1-20 μm, which is not conducive to the reduction of thermal ...

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  • Preparation method for Ga-doped ZnO texture thermoelectric material
  • Preparation method for Ga-doped ZnO texture thermoelectric material
  • Preparation method for Ga-doped ZnO texture thermoelectric material

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Embodiment Construction

[0010] First, the Ga-doped ZnO nano-microcomposite spherical precursor powder was prepared by hydrothermal method, and zinc acetate (Zn(CH3 COO) 2 ·2H 2 O) (mass fraction greater than 99%) and gallium nitrate (Ga(NO 3 ) 3 ·xH 2 O) (mass fraction greater than 99%) is the raw material, according to the general chemical formula Zn 1-x Ga x O(0.001≤x≤0.5mol) configuration, triethanolamine ((HOCH 2 CH 2 ) 3 N) As a surfactant and deionized water as a solvent, a Ga-doped ZnO nano-micro composite spherical precursor powder was prepared in a hydrothermal kettle. The formed nano-micro composite spheres have a diameter of 1-10 μm, and the (00l) axes of the nanoparticles are radially arranged along the diameter direction of the microspheres. The nano-micro composite spherical precursor powder is subjected to spark plasma sintering to obtain a Ga-doped ZnO bulk material with a grain size of 100-900nm and a texture degree of 10-55%.

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Abstract

The invention provides a preparation method for a Ga-doped ZnO texture thermoelectric material and belongs to the technical field of energy source materials. The preparation method is characterized in that zinc acetate and gallium nitrate are used as raw materials and are prepared according to a chemical formula Zn1-xGaxO, wherein x is more than or equal to 0.001mol and less than or equal to 0.5mol; triethanolamine is used as a surfactant and de-ionized water is used as a solvent; the pH (Potential of Hydrogen) value is 7.0-9.0; a hydrothermal reaction is carried out at 120-240 DEG C for 4-80 hours; nano-micro composite spherical powder with the diameter of 1-10 microns, which is formed by self-assembly of nano particles with the size of 10nm-800nm, is prepared; a Ga-doped ZnO block material with the texture degree of 10%-55% is prepared by using a discharging plasma sintering technology under the pressure of 30MPa-200MPa and at temperature of 850-1400 DEG C, and keeping the heat and sintering for 1-30 minutes; the grain size is 100nm-900nm. According to the method, the Ga-doped ZnO block material with nano and texture structural characteristics can be simply and rapidly prepared; the carrier mobility is improved and the heat conductivity is reduced; the thermoelectric property can be improved.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and in particular relates to a method for preparing a Ga-doped ZnO textured thermoelectric material, involving a hydrothermal synthesis method and a discharge plasma sintering process. Background technique [0002] With the rapid development of industrialization, energy and environmental issues have become one of the important issues of human society. Thermoelectric materials are functional materials that directly realize the mutual conversion of thermal energy and electrical energy. Thermoelectric devices made of thermoelectric materials can output electric energy through the Seebeck effect in the presence of temperature gradients, which are called thermoelectric batteries; on the other hand, thermoelectric devices can also generate temperature differences through the Peltier effect to achieve the effect of electronic refrigeration. Thermoelectric conversion has the characteristics of ...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
Inventor 张波萍张代兵张雨桥陈茜
Owner UNIV OF SCI & TECH BEIJING
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