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Methods and apparatuses for controlling plasma in a plasma processing chamber

A plasma and processing chamber technology, applied in metal material coating process, discharge tube, coating, etc., can solve problems such as processing non-uniformity

Active Publication Date: 2014-12-17
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] like Figure 1C-Figure 1E As can be seen in , although the prior art utilizes multiple coils to provide some degree of tunability to the plasma, the problem of processing non-uniformity still exists

Method used

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  • Methods and apparatuses for controlling plasma in a plasma processing chamber
  • Methods and apparatuses for controlling plasma in a plasma processing chamber
  • Methods and apparatuses for controlling plasma in a plasma processing chamber

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Embodiment Construction

[0034] The invention will now be described in detail with reference to some embodiments shown in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and / or structures have not been described in detail in order not to unnecessarily obscure the present invention.

[0035] Various implementations are described below, including methods and techniques. It should be kept in mind that the invention may also encompass articles of manufacture including computer-readable media having stored therein computer-readable instructions for carrying out embodiments of the inventive technology. The computer readable medium may include, for example, semiconductor, magnetic, optomagnetic, opt...

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Abstract

Methods and apparatus for controlling plasma in a plasma, processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first / center RF coil, a second / edge RF coil disposed concentrically with respect to the first / center RF coil, and a RF coil set having at least a third / mid. RF coil disposed concentrically with respect to the first / center RF coil and the second / edge RF coil in a manner such that the third / mid RF coil is disposed in between the first / center RF coil and the second / edge RF coil. During processing, RF currents in the same direction are provided to the first / center RF coil and the second / edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first / center RF coil and the second edge RF coil) is provided to the third / mid RF coil.

Description

Background technique [0001] Plasma has long been used to process substrates (eg, wafers, flat panel displays, liquid crystal displays, etc.) into electronic devices (eg, integrated circuit chips) for incorporation into a variety of electronic products (eg, smartphones, computers, etc.). [0002] In plasma processing, one or more substrates may be processed using a plasma processing system having one or more plasma processing chambers. Plasma generation in each processing chamber can use capacitively coupled plasma technology, inductively coupled plasma technology, electron cyclotron technology, microwave technology, and the like. [0003] Inductively coupled plasma technology is easy to generate dense plasma suitable for etching high-performance devices, so it is widely used. In a typical Inductively Coupled Plasma (ICP) system, RF energy is supplied to an antenna, usually in the form of an induction coil positioned above a dielectric window, which is correspondingly position...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCH01J37/321H01J37/3211
Inventor 西奥多罗斯·帕纳戈普路斯约翰·霍兰亚历克斯·帕特森
Owner LAM RES CORP