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A Statistical Modeling Method of Radio Frequency Varactor

A radio frequency variable capacitor and statistical modeling technology, which is applied in the field of statistical modeling of radio frequency variable capacitors, can solve problems such as inaccurate correspondence with device manufacturing process parameters, difficulty in statistical model parameters, and different causes of process fluctuations, and achieve the modeling process fast and clear results

Active Publication Date: 2018-04-03
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the formulas do not have strict physical meaning, but are based on mathematical fitting, resulting in model parameters that cannot accurately correspond to device manufacturing process parameters
This makes it difficult to select statistical model parameters for characterizing process fluctuations
[0004] For the processes of different foundries, the reasons for the process fluctuations are different, that is, different statistical distribution characteristics are shown in the test data, and it is difficult to select a unified and fixed standard index for statistical modeling of the varactor

Method used

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  • A Statistical Modeling Method of Radio Frequency Varactor
  • A Statistical Modeling Method of Radio Frequency Varactor
  • A Statistical Modeling Method of Radio Frequency Varactor

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Embodiment Construction

[0029] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0030] The statistical modeling method of radio frequency varactor of the present invention, described radio frequency varactor is distributed on the crystal grain of wafer, and it comprises the following steps:

[0031] Determine the subcircuit topology for device modeling, determine the scalability formula used for each circuit element in the subcircuit for modeling devices of different sizes, and determine all model parameters that need to be extracted for device modeling ;

[0032] Classify the parameters into basic parameter groups, parameter groups related t...

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Abstract

The statistical modeling method of the radio frequency varactor of the present invention includes: determining all model parameters that need to be extracted for device modeling; classifying the parameters; testing the scattering parameters of the device, establishing a reference model of the device that does not include process fluctuations; obtaining the device The fluctuation characteristics of the scattering parameters on the entire wafer, determine the fluctuation data part; based on the scattering parameters of the fluctuation data part and the network parameters converted from the scattering parameters, construct the index used for statistical modeling of the device; based on the index, calculate The value of each component in the sub-circuit model, and perform sensitivity analysis and sorting of the component value relative to the index value, and select the component with the highest sensitivity; for various parameter groups in the component scalable formula, perform sensitivity analysis of the parameter value to the component value And sorting; select the parameter with the highest sensitivity, fit the statistical characteristic distribution of the device, and obtain the statistical model of the global fluctuation distribution of the device. The modeling process of the present invention is fast and clear.

Description

technical field [0001] The invention relates to the technical field of semiconductor device modeling technology, in particular to a statistical modeling method for radio frequency variable capacitors. Background technique [0002] Varactor (Varactor), as the main capacitance adjustment device, plays a very important role in the design of radio frequency integrated circuits. As the process node decreases, its performance fluctuation caused by the process on the entire wafer becomes more and more significant. At present, there is no public report on the modeling of the statistical characteristics of the radio frequency performance of the varactor. [0003] The radio frequency modeling method of the varactor has not formed a unified standard, which means that the model can adopt different sub-circuit structures, and the components in the circuit can also adopt different scalability (Scalable) formulas. Most of the formulas do not have strict physical meaning, but are based on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 刘林林郭奥
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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