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Statistical modeling method for radiofrequency variable capacitor

A radio frequency variable capacitor and statistical modeling technology, applied in the field of statistical modeling of radio frequency variable capacitors, can solve the problems of inaccurately corresponding device manufacturing process parameters, different causes of process fluctuations, and difficult statistical model parameters, etc., to achieve the modeling process fast and clear results

Active Publication Date: 2015-06-03
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
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AI Technical Summary

Problems solved by technology

Most of the formulas do not have strict physical meaning, but are based on mathematical fitting, resulting in model parameters that cannot accurately correspond to device manufacturing process parameters
This makes it difficult to select statistical model parameters for characterizing process fluctuations
[0004] For the processes of different foundries, the reasons for the process fluctuations are different, that is, different statistical distribution characteristics are shown in the test data, and it is difficult to select a unified and fixed standard index for statistical modeling of the varactor

Method used

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  • Statistical modeling method for radiofrequency variable capacitor
  • Statistical modeling method for radiofrequency variable capacitor
  • Statistical modeling method for radiofrequency variable capacitor

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Embodiment Construction

[0029] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0030] The statistical modeling method of radio frequency varactor of the present invention, described radio frequency varactor is distributed on the crystal grain of wafer, and it comprises the following steps:

[0031] Determine the subcircuit topology for device modeling, determine the scalability formula used for each circuit element in the subcircuit for modeling devices of different sizes, and determine all model parameters that need to be extracted for device modeling ;

[0032] Classify the parameters into basic parameter groups, parameter groups related t...

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Abstract

The invention discloses a statistical modeling method for a radiofrequency variable capacitor. The statistical modeling method comprises the following steps: determining all model parameters needing to be extracted for device modeling; classifying the parameters; performing a scattering parameter test on a device, and establishing a reference model not including process fluctuation of the device; acquiring the fluctuation characteristic of the scattering parameter of the device on a whole wafer, and determining a fluctuation data part; constructing an index for performing statistical modeling on the device based on the scattering parameter of the fluctuation data part and a network parameter converted from the scattering parameter; calculating each element value in a sub-circuit model based on the index, performing sensitivity analysis and sequencing of the element values relative to an index value, and selecting an element with highest sensitivity; performing sensitivity analysis and sequencing of parameter values relative to the element values respectively specific to each type of parameter groups in an element extension formula; selecting a parameter with highest sensitivity, and fitting the statistical characteristic distribution of the device to obtain a statistical model of overall fluctuation distribution of the device. The modeling process is rapid and clear.

Description

technical field [0001] The invention relates to the technical field of semiconductor device modeling technology, in particular to a statistical modeling method for a radio frequency variable capacitor. Background technique [0002] Varactor (Varactor), as the main capacitance adjustment device, plays a very important role in the design of radio frequency integrated circuits. As the process node decreases, its performance fluctuation caused by the process on the entire wafer becomes more and more significant. At present, there is no public report on the modeling of the statistical characteristics of the radio frequency performance of the varactor. [0003] The radio frequency modeling method of the varactor has not formed a unified standard, which means that the model can adopt different sub-circuit structures, and the components in the circuit can also adopt different scalability (Scalable) formulas. Most of the formulas do not have strict physical meaning, but are based on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 刘林林郭奥
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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