Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory management method, memory storing device and memory control circuit unit

A memory management and control circuit technology, applied in the direction of memory address/allocation/relocation, input/output to record carrier, etc., can solve the problems of reducing data writing efficiency, data confusion, etc., and achieve the reduction of data writing efficiency Effect

Active Publication Date: 2015-09-30
PHISON ELECTRONICS
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the garbage collection program may confuse the sorted valid old data with the newly written data, thereby reducing the data write rate when the rewritable non-volatile memory module performs sequential write (sequential write) in the future. efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory management method, memory storing device and memory control circuit unit
  • Memory management method, memory storing device and memory control circuit unit
  • Memory management method, memory storing device and memory control circuit unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable nonvolatile memory module and a controller (also called a control circuit). Generally, a memory storage device is used with a host system, so that the host system can write data to or read data from the memory storage device.

[0073] Figure 1A It is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment of the present invention. Figure 1B It is a schematic diagram of a computer, an input / output device, and a memory storage device according to an exemplary embodiment of the present invention. Figure 1C It is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment of the present invention.

[0074] Please refer to Figure 1A The host system 1000 generally includes a computer 1100 and an input / output (input / output, I / O) device 1106. The computer 1100 includes a microprocessor 1102, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memory management method, a memory storing device and a memory control circuit unit. The method comprises the steps that a written-in instruction is received to write first data into a first unused physical erasing unit; a first physical erasing unit is selected, wherein the first physical erasing unit does not contain the unused physical erasing unit and is stored with a plurality of data, and at least two of the data belong to different logic erasing units; valid data in the data are copied and written into a second unused physical erasing unit, and the second unused physical erasing unit is different from the first unused physical erasing unit.

Description

Technical field [0001] The present invention relates to a memory management mechanism, and more particularly to a memory management method of a rewritable non-volatile memory module, a memory storage device and a memory control circuit unit. Background technique [0002] Digital cameras, mobile phones and MP3 players have grown rapidly over the past few years, which has led to a rapid increase in consumer demand for storage media. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable to be built in the various exemplified above. In portable multimedia devices. [0003] Generally, after the rewritable non-volatile memory module is used for a period of time, the rewritable non-volatile memory module automatically executes a garbage collection procedure to free up excess memory space. However, the garbage collector may confuse the sorted ou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F12/02
Inventor 朱健华
Owner PHISON ELECTRONICS