Thermoelectric thick film preparation method
A thermoelectric and thick film technology, applied in the manufacture/processing of thermoelectric devices, etc., can solve the problems of reduced mutual contact, reduced flow conductivity, and reduced thermoelectric performance, and achieves the effect of improving thermoelectric performance, not easy to oxidize, and close contact.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2015-11-04
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to the technical field of material preparation, and more specifically, to a method for preparing a thermoelectric thick film. Background technique
[0002] The temperature difference is an important parameter to determine the efficiency of thermoelectric power generation. The length of traditional block thermoelectric arms is limited, and it is not easy to establish a large temperature difference. Therefore, the production of long film-shaped thermoelectric arms is a feasible method to improve the efficiency of thermoelectric power generation. The preparation method of the conductor thick film is flexible in design, small in investment, low in cost, and reliable in performance.
[0003] A good thermoelectric material must have a high thermoelectric coefficient S And the conductivity s, so as to ensure a more obvious thermoelectric effect, and at the same time make the generated Joule heat small.
[0004] The attachment and mold...
Examples
Embodiment 1
[0019] The ratio of the polymer of the present invention is the lowest ratio that only makes the thermoelectric thick film slurry printed on the flexible substrate dry and does not fall off by itself through experiments. The adhesion and molding of the thermoelectric thick film on the flexible substrate are closely covered The high-temperature-resistant film and cold isostatic pressing treatment are obtained to verify that the present invention not only obtains the electrical conductivity s close to the bulk material, thereby improving its thermoelectric performance:
[0020] Such as figure 1 Shown is a schematic diagram of the process flow of the present invention, including a flexible substrate 1 , electrodes 2 , a mask 3 , a thermoelectric thick film 4 , and a high-temperature-resistant film 5 .
[0021] The length, width and thickness of P-type Bi2Te3-based alloy strip samples are 29.3mm, 3.5mm and 2.1mm respectively. At room temperature, using the four-terminal method, th...