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A trench Schottky diode structure and its preparation method

A Schottky diode and trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the inability to meet chip packaging requirements

Active Publication Date: 2019-04-09
SHANGHAI GREENPOWER ELECTRONICS
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  • Abstract
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Problems solved by technology

[0003] The purpose of the present invention is to provide a trench Schottky diode structure, which can solve the disadvantages that the prior art cathode packaging part is on the back of the chip and cannot meet the packaging requirements for wire contact on the front of the chip. The present invention also provides Fabrication Method of Trench Schottky Diode Structure

Method used

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  • A trench Schottky diode structure and its preparation method
  • A trench Schottky diode structure and its preparation method
  • A trench Schottky diode structure and its preparation method

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specific Embodiment approach

[0028] Such as figure 1 As shown, a trench Schottky diode structure includes an anode package part 100 and a cathode package part 200 , and the cathode package part 200 is on the same side as the anode package part 100 . Lead the cathode packaging part from the back of the chip to the front of the chip, so as to meet the packaging requirements of the wire contact on the front of the chip.

[0029] The cathode packaging part 200 of the present invention includes a cathode through hole 210 and an edge 211, and the edge 211 is arranged on the periphery of the cathode through hole 210, and the edge and the bottom and side walls of the cathode through hole are both The first metal 204 is deposited, the second metal 205 is also deposited on the first metal 204, and there is a gap inside the cathode through hole 210, that is, the second metal does not completely deposit the cathode through hole. .

[0030] The present invention includes an N-type silicon substrate 1, and one side o...

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Abstract

The invention discloses a groove-included schottky diode structure comprising an anode packaging part and a cathode packaging part. The anode packaging part and the cathode packaging part are arranged at the same side. In addition, the invention also discloses a preparation method for a groove-included schottky diode structure. According to the groove-included schottky diode structure, because the anode packaging part and the cathode packaging part are arranged at the same side, the schottky diode chip is suitable for more packaging modes.

Description

technical field [0001] The invention relates to a diode structure, more specifically a trench Schottky diode structure, and also relates to a preparation method of the trench Schottky diode structure. Background technique [0002] With the development of packaging technology, a variety of new packaging forms have emerged in the electronics industry. The requirements of these packaging forms for chips have also undergone different changes. In some packaging forms, it is required that the leads of the chip must be in the chip The surface, while the cathode package of the traditional Schottky diode is on the back of the chip. Therefore, traditional Schottky diodes cannot meet certain packaging requirements, especially multi-chip packaging (MCP) and chip-scale packaging (CSP), which are widely used today. Contents of the invention [0003] The purpose of the present invention is to provide a trench Schottky diode structure, which can solve the disadvantages that the prior art...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/41H01L21/329
CPCH01L29/41H01L29/66143H01L29/8725
Inventor 高盼盼代萌
Owner SHANGHAI GREENPOWER ELECTRONICS
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