Shift register unit and driving method thereof, gate drive circuit and display device

Abstract

The embodiment of the invention provides a shift register unit and a driving method thereof, a gate drive circuit and a display device, and relates to the technical field of display. Bias voltage affecting time of thin-film transistor components of a model can be greatly reduced, the change of the electrical properties of the thin-film transistors can be reduced and long-term stability of the whole panel under the condition of high reliability testing can be enhanced. The shift register unit comprises a first input unit, a second input unit, a first reset unit, a second reset unit, a first output unit, a second output unit, a first pull-up unit, a second pull-up unit, a first pull-down unit and a second pull-down unit. The shift register unit and the driving method thereof, the gate drive circuit and the display device are used for manufacturing of displayers.

Description

technical field [0001] Embodiments of the present invention relate to the field of display technology, in particular to a shift register unit, a driving method, a gate driving circuit and a display device. Background technique [0002] In recent years, the development of liquid crystal displays has shown a trend of high integration and low cost. One of the very important technologies is the mass production of GOA (full name in English: Gate Driver on Array, Chinese: row drive on array substrate). The gate switch circuit is integrated on the array substrate of the liquid crystal display panel by using GOA technology, so that the part of the gate drive integrated circuit can be saved, so as to reduce the product cost in terms of material cost and manufacturing process. The gate switch circuit integrated on the array substrate using the GOA technology is also called a GOA circuit or a shift register circuit or a gate drive circuit and the like. [0003] Wherein, the shift reg...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, in the existing thin-film transistor shift register model, VGH is high level, and only jumps to low level at the end of one frame, and returns to high level after the next frame starts, and VGH is at high level The action period is greater than 95%, which causes M5, M9, M10, and M11 in the model to be under high bias for a long time, which will cause changes in the electrical characteristics of these four thin film transistors, reduce the service life of the display, and also cause Difficult to meet high reliability test conditions

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