Welding method and welding system for semiconductor device

A welding method and welding system technology, applied in semiconductor devices, welding equipment, welding equipment, etc., can solve the problems of poor heating effect at the welding position and so on

Inactive Publication Date: 2017-01-04
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the first purpose of the present invention is to provide a welding method for power semiconductor devices, which can effectively solve the problem of poor heating effect of the welding position during welding. The second purpose of the present invention is to provide a A kind of welding system adopting above-mentioned welding method

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  • Welding method and welding system for semiconductor device
  • Welding method and welding system for semiconductor device

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Embodiment Construction

[0028] The embodiment of the invention discloses a welding method for a power semiconductor device, so as to effectively solve the problem of poor heating effect of the welding position during welding.

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see Figure 1-Figure 2 , figure 1 A flowchart of a soldering method for a semiconductor device provided by an embodiment of the present invention; figure 2 A schematic structural diagram of a soldering system for a semiconductor device ...

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Abstract

The invention discloses a welding method for a power semiconductor device. The welding method comprises the following steps: adding a heat exchange medium with a preset temperature into a heat exchange cavity of a radiator of the power semiconductor device; welding a lining plate and a radiator of the power semiconductor device together. By adopting the welding method for welding, the heat exchange medium can exchange heat rapidly, so that the radiator is rapidly heated and then the heating efficiency is improved by utilizing the heat conducting characteristic of the radiator and pumping the heat exchange medium at a preset temperature in the heat exchange cavity of the radiator; meanwhile, the radiator needs uniform radiation, and reversely, the heat exchange medium can enable the radiator to be heated uniformly, thus ensuring the temperature uniformity of the welded position of the radiator and then ensuring the welding quality; therefore the problem of poor heating effects at the welding positions during welding can be effectively solved by adopting the welding method for the power semiconductor device. The invention also discloses a welding system for the semiconductor device, which adopts the welding method.

Description

technical field [0001] The present invention relates to the technical field of semiconductor device manufacturing, more specifically, to a semiconductor device welding method, and also to a semiconductor device welding system. Background technique [0002] A typical power semiconductor device module (such as an IGBT module) generally includes a power semiconductor chip, an insulating liner, a substrate, and a water-cooled radiator arranged in sequence from top to bottom, wherein the power semiconductor chip is connected to the insulating liner through a chip soldering layer, and The insulating liner is welded to the base plate through the liner welding layer. At the same time, the substrate is installed on the heat sink with flow channel structure inside through the heat conducting material, and the heat generated by the chip during the working process is transferred to the heat sink through the multi-layer structure and exchanges heat with the circulating cooling medium in ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): B23K1/00B23K1/20B23K20/00B23K20/24
CPCB23K1/00B23K1/20B23K20/00B23K20/24B23K2101/40
Inventor窦泽春潘昭海刘国友吴煜东彭勇殿常桂钦吴义伯方杰莫若
OwnerZHUZHOU CSR TIMES ELECTRIC CO LTD