A non-destructive method for obtaining flexible ferroelectric film capacitors

A ferroelectric thin film, non-destructive technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of high equipment and process requirements, no electrical characteristics, time and capital investment, etc.

Inactive Publication Date: 2019-01-22
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional silicon-based materials are mechanically brittle and difficult to withstand large deformations, so silicon-based material devices have their own limitations in flexible applications
[0003] In general, flexible devices are grown on organic substrates, and their electrical properties are far from ideal for devices grown on inorganic substrates.
At the same time, considering that the production of organic flexible substrate devices has high requirements on equipment and technology, it requires a lot of time and capital investment.

Method used

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  • A non-destructive method for obtaining flexible ferroelectric film capacitors
  • A non-destructive method for obtaining flexible ferroelectric film capacitors
  • A non-destructive method for obtaining flexible ferroelectric film capacitors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] A kind of PZT structural feature of rigid silicon substrate comprises: silicon substrate 1, epitaxial buffer silicon dioxide (SiO 2 ) layer 2, lower electrode 3, PZT4, upper electrode 5, such as figure 1 .

[0028] Before grinding, measure the hysteresis loop of the sample in advance to compare the subsequent measurement results. The instrument used is a ferroelectric performance tester. The test conditions are: voltage 40V, frequency 1kHz, and test waveform is triangular wave.

[0029] First, heat up the heating platform, put the small glass piece 7 on the heating platform, and at the same time place a small piece of industrial wax 6 at the center of the small glass piece 7, when the industrial wax 6 is completely melted (about 80 ℃ ) clamp the sample with tweezers, at this time the sample is rigid, and at the same time the silicon substrate 1 is facing up, placed in the center of the small glass piece 7, so that it is fully in contact with the industrial wax 6, as ...

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Abstract

The invention discloses a method of acquiring a flexible ferroelectric thin film capacitor nondestructively, which belongs to the technical field of ferroelectric devices and semiconductors. A ferroelectric thin film capacitor with an inorganic substrate and with flexibility is acquired in a convenient and economical method; a common material such as emery, industrial wax, a glass sheet and a glass plate is used as a substrate grinding tool, a heating platform is used for melting the industrial wax and bonding the glass sheet and the PZT, the emery is then used for thinning the rigid PZT device with the substrate thickness about 500 [mu]m to be 100 [mu]m, a flexible PZT is acquired, and a small amount of chemical reagent is then used for removing the residual industrial wax attached to the surface of the device. The method of the invention is simple in principle, low in cost, safe and reliable in operation; compared with other methods, the method of the invention can acquire the flexible ferroelectric thin film capacitor more quickly and more safely, the excellent electrical properties are not lost, the flexible device can keep excellent electrical properties under a repeated force condition, and the reliability is excellent.

Description

technical field [0001] The invention relates to the field of ferroelectric thin film devices and semiconductor technology, is applicable to various ferroelectric thin film capacitors, and is mainly used to obtain ferroelectric thin film capacitors with flexible characteristics. Background technique [0002] With the development of semiconductor technology level, the development of flexible substrate devices based on ferroelectric materials has received more and more attention. Its good physical and chemical properties make flexible substrate devices have very broad application prospects. Traditional silicon-based materials are mechanically brittle and difficult to withstand large deformations, so silicon-based material devices have their own limitations in flexible applications. [0003] In general, flexible devices are grown on organic substrates, and their electrical properties are far from ideal for devices grown on inorganic substrates. At the same time, considering tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64
Inventor 朱慧孟晓张迎俏冯士维郭春生汪鹏飞
Owner BEIJING UNIV OF TECH
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