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Apparatus for dynamic temperature control of an ion source

An ion source and angle technology, applied in the field of temperature devices, can solve problems affecting the service life of ion sources or beam current

Active Publication Date: 2017-04-19
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the temperature of the ion source may also affect the lifetime of the ion source or the beam current

Method used

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  • Apparatus for dynamic temperature control of an ion source
  • Apparatus for dynamic temperature control of an ion source
  • Apparatus for dynamic temperature control of an ion source

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Embodiment Construction

[0015] As noted above, the ion source includes a plurality of walls defining a chamber. In some embodiments, one or more gases are introduced into the chamber and ionized. In other embodiments, a solid material may be placed in the chamber and sputtered to generate ions. In each of these embodiments, ions are generated in a chamber. Pores in one of the walls allow ions to be extracted and directed towards the workpiece.

[0016] A first embodiment of a device 10 is shown in FIGS. 1A to 1C . Apparatus 10 includes ion source 100 and one or more heat shields 170 , 175 . The ion source 100 has a plurality of walls defining a chamber 120 . Ion source 100 may be shaped as a rectangular prism having a certain height, length and width. The ion source 100 has a bottom wall 111, an opposite top wall 112, two opposite side walls 113, 114 (see Figure 2A ), and two opposite end walls 115,116. The walls may define a chamber therein. In other embodiments, the chamber may be divided ...

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Abstract

An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and / or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions.

Description

[0001] This application claims priority to US Patent Application Serial No. 14 / 322,357, filed July 2, 2014, the disclosure of which is incorporated herein by reference. technical field [0002] The present invention relates to a device for controlling the temperature of an ion source, and in particular to a device for dynamically changing the temperature of an ion source. Background technique [0003] The ion source is used to ionize a gas introduced into a chamber of the ion source. Typically, an ion source has walls that define a chamber. Gas is introduced into this chamber. The chamber also has an ion generating mechanism. In some cases, this ion generating mechanism may be an indirect heated cathode that emits electrons that are used to ionize the gas in the chamber. [0004] Different gases preferably ionize at different temperatures. For example, larger molecules ionize preferably at lower temperatures to ensure that large molecular ions are formed rather than smal...

Claims

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Application Information

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IPC IPC(8): H01J37/08G05D23/00
CPCH01J37/08H01J2237/061H01J27/022
Inventor 奎格·R·钱尼威廉·戴维斯·李奈尔·J·巴森
Owner VARIAN SEMICON EQUIP ASSOC INC