Method and apparatus of screening transistor

Abstract

The invention discloses a method and apparatus of screening transistors. The method includes the steps of determining a first electric leakage current value that is greater than a rated electric leakage current value of transistors, obtaining a first voltage resistance value through testing when the transistors are at the first electric leakage current value, and screening out transistors that have undergone soft breakdown according to the first voltage resistance value. Through the embodiment of the invention, transistors high in qualified rate can be screened.

Description

technical field [0001] The invention relates to the technical field of transistor testing, in particular to a method and device for screening transistors. Background technique [0002] Transistors are widely used because they have multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation. Transistors will inevitably be doped with impurities during the manufacturing process. Transistors doped with impurities have low performance, or even unqualified transistors. Therefore, before using transistors, they need to be tested by a corresponding test system to ensure Screen out qualified transistors. [0003] At present, the specification parameters recorded in the data sheet (Date sheet) used to introduce the specification and performance of the transistor in detail will include the rated withstand voltage value and the rated leakage current value of the transistor. When screening transistors, the rated withstand ...

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Problems solved by technology

Therefore, the current transistor screening method cannot screen out transistors with soft breakdown, and the qualified rate of the screened transistors is relatively low.

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