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Fin field effect transistor and manufacturing method thereof

A fin-type field effect and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as load effect and fin bending

Active Publication Date: 2020-07-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current FinFET processes can suffer from loading effects and fin bowing issues

Method used

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  • Fin field effect transistor and manufacturing method thereof
  • Fin field effect transistor and manufacturing method thereof
  • Fin field effect transistor and manufacturing method thereof

Examples

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Embodiment Construction

[0012] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. An instance of a component such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a r...

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Abstract

A fin field effect transistor (FinFET) includes a substrate, a plurality of insulators disposed on the substrate, a gate stack, and a strained material. The substrate includes at least one semiconductor fin and the semiconductor fin includes at least one modulation portion distributed therein. The insulator sandwiches the semiconductor fin. The gate stack is disposed over a portion of the semiconductor fin and a portion of the insulator. The strained material covers a portion of the semiconductor fin exposed by the gate stack. Additionally, methods for fabricating FinFETs are provided.

Description

technical field [0001] Embodiments of the present invention relate to integrated circuit devices, and more particularly, to fin field effect transistors and methods of manufacturing the same. Background technique [0002] As semiconductor device dimensions continue to scale down, three-dimensional multi-gate structures such as Fin Field Effect Transistors (FinFETs) have been developed to replace planar Complementary Metal Oxide Semiconductor (CMOS) devices. The structural component of a FinFET is a silicon-based fin extending vertically from the surface of the substrate, and the gate wrapping the conductive channel formed by the fin further provides better electrical control of the channel. [0003] During the fabrication of FinFETs, the fin profile is very important to the process window. Current FinFET processes can suffer from loading effects and fin bowing issues. Contents of the invention [0004] An embodiment of the present invention provides a Fin Field Effect Tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/785H01L21/823821H01L29/66803H01L29/6681H01L27/0924H01L27/0886H01L29/7848H01L21/823431H01L29/1083H01L29/0649H01L29/0847H01L21/76224H01L21/823481H01L21/26506H01L21/0228H01L21/0262
Inventor 张哲诚林志翰
Owner TAIWAN SEMICON MFG CO LTD