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Method for preparing large-area double-layer graphene film on insulating substrate

A double-layer graphene, insulating substrate technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problem of destroying graphene lattice structure, losing graphene electrical properties, carrier Mobility decay and other problems, to achieve the effect of high mobility, less defects, and easy operation

Active Publication Date: 2019-06-25
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods can prepare large-area graphene films, they seriously destroy the lattice structure of graphene and lose the excellent electrical properties of graphene, especially the carrier mobility of graphene is inevitably severely attenuated. Therefore, Need to find a new method to prepare graphene film on insulator substrate

Method used

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  • Method for preparing large-area double-layer graphene film on insulating substrate
  • Method for preparing large-area double-layer graphene film on insulating substrate
  • Method for preparing large-area double-layer graphene film on insulating substrate

Examples

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Embodiment 1

[0024] Such as figure 1 As shown, the carbon source is methane, the copper tube is polycrystalline copper foil, the reactor 4 is a quartz tube, the No. 1 tube is an argon gas tube, the No. 2 tube is a hydrogen gas tube, and the No. 3 tube is a methane gas tube.

[0025] A method for preparing a large-area double-layer graphene film on an insulating substrate, comprising the following steps:

[0026] a) Prepare the composite substrate: the composite substrate includes an external copper tube 5, and an insulating substrate 6 arranged inside the copper tube 5, the insulating substrate 6 is located within the range of the copper tube 5, and the copper tube 5 acts as The role of the catalyst: a small quartz tube with a diameter of 1.5 to 5mm is used as a mold, and the polycrystalline copper foil is curled and extended along the inner wall of the quartz tube to form a copper tube. In the first embodiment, a 1.8mm quartz tube is used as a mold;

[0027] b) Place the copper tube in a...

Embodiment 2

[0033] Such as figure 1 As shown, the carbon source is acetylene, and it can also be a mixed gas of methane and acetylene. The copper tube 5 is a single crystal copper foil, the reactor is a quartz tube, the No. 1 tube is an argon tube, the No. 2 tube is a hydrogen tube, and the No. 3 tube Gas pipe for a mixture of methane and acetylene.

[0034] A method for preparing a large-area double-layer graphene film on an insulating substrate, comprising the following steps:

[0035] a) Prepare the composite substrate: the composite substrate includes an external copper tube 5, and an insulating substrate 6 arranged inside the copper tube 5, the insulating substrate 6 is located within the range of the copper tube 5, and the copper tube 5 acts as The role of the catalyst: using the inner wall of the reactor 4 as a mold, the single crystal copper foil is curled and extended along the inner wall of the reaction tube 4 to form a copper tube 5, and then two insulating substrates 6 are st...

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Abstract

The invention discloses a method for preparing a large-area double-layer graphene film on an insulated liner. The method comprises the following steps: a composite liner is manufactured; the compositeliner comprises a copper pipe on an outer part and an insulated liner arrange in the copper pipe; the insulated liner is located in the range of the copper pipe; the copper pipe is made by curling acopper foil into a pipe shape; the composite liner is placed in a reactor, and mixed gas of argon and hydrogen is introduced into the reactor; the composite liner is heated, so that the copper pipe and the insulated liner in the composite liner both reach target temperature; then temperature is maintained constant for 30-120 min; temperature is continuously maintained constant, a gas carbon sourceis introduced into the reactor; and then the large-area double-layer graphene film can be obtained on the insulated liner under effect of a copper catalyst. According to the method, preparation of the large-area double-layer graphene film on the insulated liner is realized by utilizing a normal-pressure chemical vapor deposition method under catalysis effect of the copper foil; and the method isconvenient in operation and simple and feasible.

Description

technical field [0001] The invention relates to a method for preparing a large-area double-layer graphene film on an insulating substrate, and belongs to the technical field of graphene. Background technique [0002] At present, graphene, as a single-atom-thick two-dimensional thin film material, exhibits excellent electrical, optical, and mechanical properties due to its unique Dirac cone band structure, which has aroused a research boom in various scientific fields. From the initial preparation of micron-scale graphene films by micro-mechanical exfoliation of highly oriented pyrolytic graphite, to the widely used chemical vapor phase method to prepare 30-inch large-area graphene films on the surface of transition metal substrates Ni or Cu, and the use of redox Single-layer, double-layer or multi-layer graphene can be prepared in large quantities by the method or liquid phase exfoliation method. [0003] The preparation technology of large-area graphene films has become in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/44
Inventor 孙海斌高延利张崇武王俊雅王其尚许军旗
Owner XINYANG NORMAL UNIVERSITY