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A state non-volatile photoswitch based on floating gate charging and discharging and a preparation method thereof

An optical switch, non-volatile technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve the effect of increasing the overlapping area, increasing the overlapping, and shortening the length

Active Publication Date: 2018-09-14
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention is based on the existing photonics theory and integrated optical switch technology, and aims at the problem that traditional optical switches must consume static power to maintain the switching state, and provides a non-volatile optical switch based on charging and discharging of the floating gate and its preparation method

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  • A state non-volatile photoswitch based on floating gate charging and discharging and a preparation method thereof
  • A state non-volatile photoswitch based on floating gate charging and discharging and a preparation method thereof
  • A state non-volatile photoswitch based on floating gate charging and discharging and a preparation method thereof

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Embodiment Construction

[0057] The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings and Examples. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and operating procedures are provided, but the protection scope of the present invention is not limited to Examples described below.

[0058] see first figure 1 , figure 1 It is a schematic diagram of the first embodiment of the state non-volatile optical switch of the present invention—planar floating gate structure. The cross-sectional structure of the switch waveguide includes: from bottom to top, monocrystalline silicon substrate, silicon dioxide buried layer (lower cladding layer), monocrystalline silicon n-type doped layer, central insulating silicon dioxide layer, silicon dioxide An isolation layer, a single crystal silicon floating gate layer, an oxygen nitrogen oxide (ONO) isolation layer, an up...

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Abstract

The invention provides a state non-volatile photoswitch based on floating gate charging and discharging and a preparation method thereof. The photoswitch comprises a monocrystalline silicon substrate,a silicon dioxide buried layer, a monocrystalline silicon n-type doped layer, an insulation silicon dioxide layer, a monocrystalline silicon floating gate layer, an oxygen-nitrogen-oxygen isolation layer, a monocrystalline silicon p-type doped layer, a silicon dioxide upper wrapping layer and a metal electrode, which are arranged from bottom to top successively. The photoswitch wholly comprises two floating gate capacitors which are connected in series and the carrier concentration in the floating gates can be changed through the electronic tunneling effect. Since the carrier dispersion effect causes the change of the waveguide effective refractive index, a light path can be regulated; the switched light path can maintain an original state after breakage of voltage, so that the photoswitch has a broad application prospect in the field of photo-communication and optical interconnection data exchange.

Description

technical field [0001] The invention relates to an optical switch and an optical exchange device in silicon-based integrated optoelectronics, in particular to a state non-volatile optical switch based on charging and discharging of a floating gate and a preparation method thereof. Background technique [0002] Integrated silicon-based optical switches have the advantages of low power consumption, fast response, easy integration, and CMOS process compatibility. Under the background of the rapid development of big data and cloud computing, they have great application prospects in the field of data routing and switching in optical communications. , which provides the possibility to solve the bandwidth limitation of traditional electrical signals and realize the next-generation high-speed all-optical switching network. [0003] There are many ways to realize the integrated optical switch. The optical switch based on microelectromechanical system (MEMS) developed by the Universit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L27/105H01L29/788
CPCH01L21/82H01L27/105H01L29/788
Inventor 周林杰徐喆陆梁军陈建平刘娇
Owner SHANGHAI JIAO TONG UNIV