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IC with insulating trench and related method

A trench, electrical insulation technology, applied in instrumentation, semiconductor/solid state device testing/measurement, analyzing materials, etc., can solve problems such as reliability structure complexity, limitations, etc.

Active Publication Date: 2018-09-21
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, although designed for the use mentioned, the reliability of systems such as Yamashita et al. US Patent No. 6,950,767 has limitations due to the complexity of the structure of such systems (although miniaturized)
A possible approach is to create electronic systems fully embedded in integrated circuits with no electrical interconnects, but this may require an efficient way of supplying power to the IC via electromagnetic waves to reduce power loss due to the conductivity of semiconductor materials

Method used

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  • IC with insulating trench and related method
  • IC with insulating trench and related method
  • IC with insulating trench and related method

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Embodiment Construction

[0053] The present disclosure now is described more fully hereinafter with reference to the accompanying drawings in which several embodiments of the disclosure are shown. However, this disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Like reference numerals refer to like elements throughout. Additionally, a prime (') and base 100 reference numerals are used to indicate like elements in alternative embodiments.

[0054] initial reference Figure 1-2B , the IC 50 according to the present disclosure is now described. Illustratively, IC 50 includes a semiconductor substrate 51 having circuitry 52 formed therein, and an interconnect layer 53 over the semiconductor substrate. The semiconductor substrate 51 may include, for example,...

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Abstract

The invention relates to an IC with an insulating trench and a related method. The IC may include a semiconductor substrate having circuitry formed in the substrate, an interconnect layer above the semiconductor substrate and having an antenna coupled to the circuitry, and a seal ring around a periphery of the interconnect layer. The IC may include an electrically insulating trench extending vertically into the semiconductor substrate and extending laterally across the semiconductor substrate from adjacent one side to adjacent another side.

Description

[0001] This application is a divisional application of an invention patent application with an application date of November 24, 2015, an application number of 201510824999.6, and an invention title of "IC with insulating trenches and related methods". technical field [0002] The present disclosure relates to the field of electronic devices, and more particularly to integrated circuits and related methods. Background technique [0003] In solid structures, especially in load-bearing structures such as bridges, buildings, tunnels, railways, containment walls, dams, embankments, pipelines and underground structures of urban transport lines, it is important to monitor the main parameters at many points , such as eg pressure, temperature and mechanical stress. Such monitoring is performed periodically or continuously and is useful both in the initial stages of a structure as well as during its life cycle. [0004] For this purpose, methods in this field include the use of elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28H01L21/66H01L21/762H01L23/00H01L23/58
CPCG01N33/383G01R31/2872H01L21/76224H01L22/14H01L23/562H01L23/585H01L2924/0002H02J50/20H01L2924/00
Inventor A·帕加尼G·吉兰多F·G·齐格利奥利A·菲诺基亚洛
Owner STMICROELECTRONICS SRL