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Semiconductor devices

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as the difficulty in precise adjustment of the manufacturing process of semiconductor devices

Active Publication Date: 2018-09-25
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Precise tuning of the fabrication process for semiconductor devices including fin-like active regions becomes difficult as design rules decrease

Method used

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  • Semiconductor devices
  • Semiconductor devices
  • Semiconductor devices

Examples

Experimental program
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Embodiment approach

[0058] However, according to example embodiments of inventive concepts, when the first sacrificial gate 222 is formed to have a relatively small first height H11 by using the first hard mask pattern 210 including the first etch stop layer 214 , the second The aspect ratio of the second recessed region 220R2 can be reduced, so that the loading effect in subsequent processing can be reduced and / or prevented.

[0059] Thereafter, an insulating layer covering the first hard mask pattern 210 , the first sacrificial gate 222 and the sacrificial gate insulating pattern 224 may be formed through an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process. The insulating layer may be anisotropically etched to form gates on sidewalls of the first hard mask pattern 210, on sidewalls of the first sacrificial gate 222, and on sidewalls of the sacrificial gate insulating pattern 224. pole spacer structure 140 .

[0060] In some embodiments, the gate spacer structu...

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Abstract

The present invention relates to semiconductor devices. A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering anupper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, anda self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Description

technical field [0001] Example embodiments of inventive concepts relate to semiconductor devices and methods of fabricating the same, and more particularly, to semiconductor devices including fin-type active regions and methods of fabricating the same. Background technique [0002] As electronic devices become smaller and lighter, the demand for highly integrated semiconductor devices has been increasing. Short channel effects in transistors can occur due to the scaling down of semiconductor devices, and thus the reliability of semiconductor devices can be reduced. Semiconductor devices including fin-like active regions have been developed to reduce short channel effects. As design rules decrease, precise adjustment of the fabrication process of semiconductor devices including fin-type active regions becomes difficult. Contents of the invention [0003] According to an example embodiment of the inventive concept, a semiconductor device may include: a fin-type active regi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L29/78
CPCH01L29/41H01L29/785H01L29/66545H01L29/0847H01L29/41791H01L29/518H01L29/66795H01L29/66553H01L29/7853H01L29/6656H01L29/42368
Inventor 金润载金东权金镐永刘真赫郑宇陈
Owner SAMSUNG ELECTRONICS CO LTD