Pine-like metal nanograting

A technology of metal nano and pine trees, which is applied in the direction of diffraction grating, nanotechnology, nanotechnology, etc., can solve the problems of large structure size, difficulty of three-dimensional gold nanostructure, limiting application and development, etc., and achieves the effect of expanding the range and realizing broadband absorption

Active Publication Date: 2021-02-26
TSINGHUA UNIV +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Focused Ion Beam Induced Etching (FIBIE) is also one of the dry etching techniques for preparing three-dimensional nanostructures, but it can only be etched in a certain direction, such as oblique groove structures, large structure sizes and etching masks The franchise requirements limit its application and development
Three-dimensional gold nanostructures are particularly difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pine-like metal nanograting
  • Pine-like metal nanograting
  • Pine-like metal nanograting

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] see Figure 5 , the first embodiment of the present invention provides a method for preparing the pine-like metal nano-grating 10 . The preparation method of the pine-like metal nano-grating 10 comprises the following steps:

[0032]S10: providing a substrate 100;

[0033] S20: disposing a first metal layer 120 on the surface of the substrate 100, disposing an isolation layer 130 on the surface of the first metal layer 120 away from the substrate 100, and disposing an isolation layer 130 on the surface of the isolation layer 130 away from the first metal layer 120 setting a second metal layer 140;

[0034] S30: disposing a patterned first mask layer 151 on the surface of the second metal layer 140 away from the isolation layer 130, the patterned first mask layer 151 covering a partial area of ​​the surface of the second metal layer 140 , and expose the rest of the area;

[0035] S40: Etching the second metal layer 140 to obtain a plurality of parallel and spaced tri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a pine tree metal nano grating, which comprises: a substrate and a plurality of three-dimensional nanostructures distributed on the surface of the substrate in the form of an array, the three-dimensional nanostructures include a first cuboid structure, a second cuboid structure and A triangular prism structure, the first cuboid structure is arranged on a surface of the base, the second cuboid structure is arranged on the surface of the first cuboid structure away from the base, and the triangular prism structure is arranged on the second cuboid structure away from the first cuboid The surface of the structure, the width of the bottom surface of the triangular prism structure is equal to the width of the upper surface of the second cuboid structure and greater than the width of the upper surface of the first cuboid structure, and the first cuboid structure and the triangular prism structure are both a metal Floor.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a pine-like metal nano-grating and a preparation method thereof. Background technique [0002] The nanostructures of gold and silver have important applications in many fields, such as nano-optics, biochemical sensors, precision optical instruments for ultra-high resolution imaging, surface plasmons and surface plasmon lithography, etc., which strictly rely on gold nanostructures. Researchers prepare gold and silver nanostructures mostly through Lift-off process, FIB milling or electrochemistry. However, these schemes either lead to unsatisfactory structural properties due to the introduction of chemical reagents, or it is difficult to achieve specific shapes and very small nanostructures. It is very challenging to prepare gold and silver nanostructures with a certain shape. [0003] In the processing of nanostructures, chemical etching depends on the chemical pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18B82Y30/00
CPCB82Y30/00G02B5/18G02B5/1857C23F1/02G02B5/1809G02B2207/101G03F7/0002C23F4/00
Inventor 朱振东李群庆范守善
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap